是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | 风险等级: | 5.65 |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 600 V |
最大漏极电流 (Abs) (ID): | 3 A | 最大漏极电流 (ID): | 3 A |
最大漏源导通电阻: | 1.6 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 50 W | 最大脉冲漏极电流 (IDM): | 12 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD3NM60-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK | |
STD3NM60N | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 1.6 Ohm, 3.3 A MDmesh(TM) II Power MOSFET in DPAK package | |
STD3NM60T4 | STMICROELECTRONICS |
获取价格 |
N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IP | |
STD3PK50Z | STMICROELECTRONICS |
获取价格 |
P-channel 500 V, 3 Ω typ., 2.8 A Zener-prote | |
STD3PS25 | STMICROELECTRONICS |
获取价格 |
P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET | |
STD3PS25-1 | STMICROELECTRONICS |
获取价格 |
P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET | |
STD3PS25T4 | STMICROELECTRONICS |
获取价格 |
3A, 250V, 2.8ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252, DPAK-3 | |
STD4 | COOPER |
获取价格 |
Circuit Protection Solutions Low Voltage Fuse Links Catalogue | |
STD40100S | JSMC |
获取价格 |
TO-220 | |
STD40G08S | SIRECTIFIER |
获取价格 |
Thyristor-Diode Modules |