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STD3NM60-1 PDF预览

STD3NM60-1

更新时间: 2024-01-24 21:45:13
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 550K
描述
N-CHANNEL 600V - 1.3ohm - 3A TO-220/DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET

STD3NM60-1 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.65雪崩能效等级(Eas):200 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn) - annealed端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3NM60-1 数据手册

 浏览型号STD3NM60-1的Datasheet PDF文件第2页浏览型号STD3NM60-1的Datasheet PDF文件第3页浏览型号STD3NM60-1的Datasheet PDF文件第4页浏览型号STD3NM60-1的Datasheet PDF文件第5页浏览型号STD3NM60-1的Datasheet PDF文件第6页浏览型号STD3NM60-1的Datasheet PDF文件第7页 
STP4NM60  
STD3NM60 - STD3NM60-1  
N-CHANNEL 600V - 1.3- 3A TO-220/DPAK/IPAK  
Zener-Protected MDmesh™Power MOSFET  
TYPE  
V
DSS  
R
I
D
Pw  
DS(on)  
STP4NM60  
STD3NM60  
STD3NM60-1  
600 V  
600 V  
600 V  
< 1.5  
< 1.5 Ω  
< 1.5 Ω  
4 A  
3 A  
3 A  
69 W  
42 W  
42 W  
3
2
TYPICAL R (on) = 1.3  
DS  
1
HIGH dv/dt AND AVALANCHE CAPABILITIES  
IMPROVED ESD CAPABILITY  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
IPAK  
TO-220  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTORING YIELDS  
3
1
DPAK  
DESCRIPTION  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizontal  
layout. The resulting product has an outstanding low  
on-resistance, impressively high dv/dt and excellent  
avalanche characteristics. The adoption of the  
Company’s proprietary strip technique yields overall  
dynamic performance that is significantly better than  
that of similar completition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increase  
the power density of high voltage converters allow-  
ing system miniaturization and higher efficiencies.  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P4NM60  
D3NM60  
D3NM60  
PACKAGE  
TO-220  
DPAK  
PACKAGING  
TUBE  
STP4NM60  
STD3NM60T4  
STD3NM60-1  
TAPE & REEL  
TUBE  
IPAK  
September 2002  
1/12  

STD3NM60-1 替代型号

型号 品牌 替代类型 描述 数据表
STD3NM60T4 STMICROELECTRONICS

完全替代

N-channel 600 V, 1.3 Ω, 3 A TO-220, DPAK, IP

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