Datasheet > STD3NM50T4

STD3NM50T4

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	172K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3A I(D) \| TO-252AA

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中文翻译

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数据手册

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STD3NM50T4 数据手册

STD3NM50

STD3NM50-1

- 3A DPAK/IPAK

N-CHANNEL 500V - 2.5

Ω

Zener-Protected MDmesh Power MOSFET

TYPE

DS(on)

DSS

STD3NM50

STD3NM50-1

500V

< 3 Ω

3 A

■

TYPICAL R (on) = 2.5 Ω

HIGH dv/dt AND AVALANCHE CAPABILITIES

IMPROVED ESD CAPABILITY

LOW INPUT CAPACITANCE AND GATE

CHARGE

DPAK

TO-252

■

LOW GATE INPUT RESISTANCE

TIGHT PROCESS CONTROL AND HIGH

MANUFACTORING YIELDS

IPAK

TO-251

DESCRIPTION

The MDmesh is a new revolutionary MOSFET

technology that associates the Multiple Drain pro-

cess with the Company’s PowerMESH horizontal

layout. The resulting product has an outstanding low

on-resistance, impressively high dv/dt and excellent

avalanche characteristics. The adoption of the

Company’s proprietary strip technique yields overall

dynamic performancethat is significantly better than

that of similar completition’s products.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

The MDmesh family is very suitable for increase

the power density of high voltage converters allow-

ing system miniaturization and higher efficiencies.

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

500

±30

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

1.89

(●)

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

ESD(G-S)

Gate source ESD(HBM-C=100pF, R=15KΩ)

Derating Factor

W/°C

V/ns

°C

0.37

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

–65 to 150

150

stg

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I <3A, di/dt<400A/µs, V <V

, T <T

J JMAX

(BR)DSS

September 2002

1/10

12 3 4 5 6 7...10

中文翻译

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