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STD3NM50 PDF预览

STD3NM50

更新时间: 2024-11-23 22:14:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 473K
描述
N-CHANNEL 500V - 2.5ohm - 3A DPAK/IPAK Zener-Protected MDmesh⑩Power MOSFET

STD3NM50 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
风险等级:5.65雪崩能效等级(Eas):130 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:3 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):46 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3NM50 数据手册

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STD3NM50  
STD3NM50-1  
N-CHANNEL 500V - 2.5- 3A DPAK/IPAK  
Zener-Protected MDmesh™Power MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD3NM50  
STD3NM50-1  
500V  
500V  
< 3 Ω  
< 3 Ω  
3 A  
3 A  
TYPICAL R (on) = 2.5 Ω  
DS  
3
HIGH dv/dt AND AVALANCHE CAPABILITIES  
IMPROVED ESD CAPABILITY  
LOW INPUT CAPACITANCE AND GATE  
CHARGE  
3
2
1
1
DPAK  
TO-252  
LOW GATE INPUT RESISTANCE  
TIGHT PROCESS CONTROL AND HIGH  
MANUFACTORING YIELDS  
IPAK  
TO-251  
DESCRIPTION  
The MDmesh™ is a new revolutionary MOSFET  
technology that associates the Multiple Drain pro-  
cess with the Company’s PowerMESH™ horizontal  
layout. The resulting product has an outstanding low  
on-resistance, impressively high dv/dt and excellent  
avalanche characteristics. The adoption of the  
Company’s proprietary strip technique yields overall  
dynamic performance that is significantly better than  
that of similar completition’s products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
The MDmesh™ family is very suitable for increase  
the power density of high voltage converters allow-  
ing system miniaturization and higher efficiencies.  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
500  
500  
±30  
3
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
Drain Current (continuous) at T = 100°C  
1.89  
12  
A
D
C
I
()  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
46  
W
C
V
Gate source ESD(HBM-C=100pF, R=15KΩ)  
Derating Factor  
4
KV  
W/°C  
V/ns  
°C  
°C  
ESD(G-S)  
0.37  
15  
dv/dt(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(1)I <3A, di/dt<400A/µs, V <V  
, T <T  
J JMAX  
SD  
DD  
(BR)DSS  
April 2003  
1/10  

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