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STD3NK60ZD PDF预览

STD3NK60ZD

更新时间: 2024-10-03 06:14:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 351K
描述
N-channel 600 V, 3.3 Ω, 2.4 A, DPAK SuperFREDMesh™ Power MOSFET

STD3NK60ZD 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.83
Is Samacsys:N雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):2.4 A最大漏极电流 (ID):2.4 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):9.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3NK60ZD 数据手册

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STD3NK60ZD  
N-channel 600 V, 3.3 , 2.4 A, DPAK  
SuperFREDMesh™ Power MOSFET  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
2.4 A  
STD3NK60ZD  
600 V  
< 3.6Ω  
100% avalanche tested  
3
Extremely high dv/dt capability  
Gate charge minimized  
1
DPAK  
Very low intrinsic capacitances  
Fast internal recovery diode  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
The SuperFREDMesh™ series associates all  
advantages of reduced on-resistance, Zener gate  
protection and very high dv/dt capability with a  
fast body-drain recovery diode. Such series  
complements the “FDmesh™” advanced  
technology.  
Table 1.  
Order code  
STD3NK60ZD  
Device summary  
Marking  
Package  
DPAK  
Packaging  
3NK60ZD  
Tape and reel  
September 2008  
Rev 2  
1/14  
www.st.com  
14  

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