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STD3NK60ZT4 PDF预览

STD3NK60ZT4

更新时间: 2024-11-23 22:14:31
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 757K
描述
N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PAK/DPAK/IPAK Zener-Protected SuperMESH⑩Power MOSFET

STD3NK60ZT4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.68雪崩能效等级(Eas):150 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):2.4 A最大漏极电流 (ID):2.4 A
最大漏源导通电阻:3.6 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):9.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3NK60ZT4 数据手册

 浏览型号STD3NK60ZT4的Datasheet PDF文件第2页浏览型号STD3NK60ZT4的Datasheet PDF文件第3页浏览型号STD3NK60ZT4的Datasheet PDF文件第4页浏览型号STD3NK60ZT4的Datasheet PDF文件第5页浏览型号STD3NK60ZT4的Datasheet PDF文件第6页浏览型号STD3NK60ZT4的Datasheet PDF文件第7页 
STP3NK60Z - STP3NK60ZFP  
STB3NK60Z-STD3NK60Z-STD3NK60Z-1  
N-CHANNEL 600V - 3.3- 2.4A TO-220/FP/D2PAK/DPAK/IPAK  
Zener-Protected SuperMESH™Power MOSFET  
TYPE  
V
R
I
D
Pw  
DSS  
DS(on)  
STP3NK60Z  
STP3NK60ZFP  
STB3NK60Z  
STD3NK60Z  
STD3NK60Z-1  
600 V  
600 V  
600 V  
600 V  
600 V  
< 3.6 Ω  
< 3.6 Ω  
< 3.6 Ω  
< 3.6 Ω  
< 3.6 Ω  
2.4 A  
2.4 A  
2.4 A  
2.4 A  
2.4 A  
45 W  
20 W  
45 W  
45 W  
45 W  
3
2
1
TYPICAL R (on) = 3.3 Ω  
DS  
TO-220  
TO-220FP  
3
1
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
VERY LOW INTRINSIC CAPACITANCES  
VERY GOOD MANUFACTURING  
REPEATIBILITY  
2
D PAK  
3
3
2
1
1
IPAK  
DPAK  
DESCRIPTION  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established strip-  
based PowerMESH™ layout. In addition to pushing  
on-resistance significantly down, special care is tak-  
en to ensure a very good dv/dt capability for the  
most demanding applications. Such series comple-  
ments ST full range of high voltage MOSFETs in-  
cluding revolutionary MDmesh™ products.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
IDEAL FOR OFF-LINE POWER SUPPLIES,  
ADAPTORS AND PFC  
LIGHTING  
ORDERING INFORMATION  
SALES TYPE  
MARKING  
P3NK60Z  
P3NK60ZFP  
B3NK60Z  
D3NK60Z  
D3NK60Z  
PACKAGE  
PACKAGING  
TUBE  
STP3NK60Z  
STP3NK60ZFP  
STB3NK60ZT4  
STD3NK60Z-1  
STD3NK60ZT4  
TO-220  
TO-220FP  
TUBE  
2
TAPE & REEL  
TUBE  
D PAK  
IPAK  
DPAK  
TAPE & REEL  
July 2003  
1/15  

STD3NK60ZT4 替代型号

型号 品牌 替代类型 描述 数据表
STD3NK60Z-1 STMICROELECTRONICS

完全替代

N-CHANNEL 600V - 3.3ohm - 2.4A TO-220/FP/D2PA
STD60NF06T4 STMICROELECTRONICS

类似代替

N-channel 60V - 0.014ohm - 60A - DPAK STripFET II Power MOSFET
STD15NF10T4 STMICROELECTRONICS

类似代替

N-channel 100V - 0.060ohm- 23A - DPAK Low gate charge STripFET II Power MOSFET

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