Datasheet > STD3N65M6

STD3N65M6

更新时间： 2024-11-25 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
18页	625K
描述
N沟道650 V、1.4 Ohm典型值、3.5 A MDmesh M6功率MOSFET，DPAK封装

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STD3N65M6 数据手册

STD3N65M6

Datasheet

N-channel 650 V, 1.4 Ω typ., 3.5 A MDmesh M6 Power MOSFET

in a DPAK package

Features

DS(on)

max.

Order code

TAB

STD3N65M6

650 V

1.5 Ω

3.5 A

•

Reduced switching losses

DPAK

Lower R_DS(on)per area vs previous generation

Low gate input resistance

100% avalanche tested

D(2, TAB)

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01475V1

Description

The new MDmesh M6 technology incorporates the most recent advancements to the

well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics

builds on the previous generation of MDmesh devices through its new M6

technology, which combines excellent R_DS(on)per area improvement with one of the

most effective switching behaviors available, as well as a user-friendly experience for

maximum end-application efficiency.

Product status link

STD3N65M6

Product summary

Order code

Marking

STD3N65M6

3N65M6

DPAK

Package

Packing

Tube

DS11612 - Rev 3 - July 2019

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...18

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