STD3NB30

更新时间： 2024-10-02 22:29:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
8页	87K
描述
N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET

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STD3NB30 数据手册

STD3NB30

N - CHANNEL 300V - 1.8

Ω

- 3.2A - DPAK

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STD3NB30

300 V

< 2Ω

3.2 A

■

TYPICAL R_DS(on)=1.8 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

ADD SUFFIX ”T4” FOR ORDERING IN TAPE

& REEL (2500 UNITS)

DESCRIPTION

DPAK

TO-252

(Suffix ”T4”)

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest R_DS(on)per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

■

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

300

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

300

± 30

3.2

Drain Current (continuous) at T_c= 25 C

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

_DM(• )

12.8

P_tot

Total Dissipation at T_c= 25 C

Derating Factor

0.32

5.5

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

( ) I_SD≤3.2A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

January 1999

12 3 4 5 6 7 8

中文翻译

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STD3NB30 替代型号

型号	品牌	替代类型	描述	数据表
IRFU214	INTERSIL	功能相似	2.2A, 250V, 2.000 Ohm, N-Channel Power MOSFETs

与STD3NB30相关器件

型号	品牌	获取价格	描述	数据表
STD3NB30T4	STMICROELECTRONICS	获取价格	3.2A, 300V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD3NB50	STMICROELECTRONICS	获取价格	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET
STD3NB50-1	STMICROELECTRONICS	获取价格	*** BITTE 4969170 VERWENDEN***
STD3NB50T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3A I(D) \| TO-252AA
STD3NC50	STMICROELECTRONICS	获取价格	N - CHANNEL 500V - 2.4ohm - 3A TO-251/TO-252 PowerMESHII MOSFET
STD3NC50-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3.2A I(D) \| TO-251AA
STD3NC50T4	STMICROELECTRONICS	获取价格	3.2A, 500V, 2.7ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD3NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Po
STD3NC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 3.2A DPAK / IPAK Po
STD3NC60T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 3.2A I(D) \| TO-252AA