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STD3N95K5AG PDF预览

STD3N95K5AG

更新时间: 2024-11-25 14:57:55
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 356K
描述
汽车级N沟道950 V、4.3 Ohm典型值、2 A MDmesh K5功率MOSFET,DPAK封装

STD3N95K5AG 技术参数

生命周期:ActiveReach Compliance Code:compliant
Factory Lead Time:17 weeks风险等级:5.73
Base Number Matches:1

STD3N95K5AG 数据手册

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STD3N95K5AG  
Datasheet  
Automotive-grade N-channel 950 V, 4.3 Ω typ., 2 A MDmesh K5 Power MOSFET  
in a DPAK package  
Features  
V
R
max.  
DS(on)  
I
D
P
TOT  
Order code  
DS  
TAB  
STD3N95K5AG  
950 V  
5.0 Ω  
2 A  
45 W  
3
2
1
DPAK  
AEC-Q101 qualified  
Industry’s lowest RDS(on) x area  
D(2, TAB)  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
100% avalanche tested  
Zener-protected  
G(1)  
Applications  
S(3)  
AM01476v1_tab  
Switching applications  
Description  
This very high voltage N-channel Power MOSFET is designed using MDmesh  
K5 technology based on an innovative proprietary vertical structure. The result is  
a dramatic reduction in on-resistance and ultra-low gate charge for applications  
requiring superior power density and high efficiency.  
Product status link  
STD3N95K5AG  
Product summary(1)  
Order code  
Marking  
STD3N95K5AG  
3N95K5  
Package  
Packing  
DPAK  
Tape and reel  
1. The HTRB test was performed at  
80% V in compliance with AEC-  
(BR)DSS  
Q101 rev. C. All the other tests were  
performed according to rev. D.  
DS12161 - Rev 2 - February 2021  
www.st.com  
For further information contact your local STMicroelectronics sales office.  
 

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