Datasheet > STD3LN80K5

STD3LN80K5

更新时间： 2024-11-25 14:58:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	809K
描述
N沟道800 V、2.75 Ohm典型值、2 A MDmesh K5功率MOSFET，DPAK封装

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STD3LN80K5 数据手册

STD3LN80K5

N-channel 800 V, 2.75 Ω typ., 2 A MDmesh™ K5

Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

R_DS(on)max

I_D

STD3LN80K5

800 V

3.25 Ω

2 A



Industry’s lowest R_DS(on)x area

Industry’s best FoM (figure of merit)

Ultra-low gate charge

100% avalanche tested

Zener-protected

Figure 1: Internal schematic diagram

Applications

D(2, TAB)



Switching applications

Description

This very high voltage N-channel Power

MOSFET is designed using MDmesh™ K5

G(1)

technology based on an innovative proprietary

vertical structure. The result is a dramatic

reduction in on-resistance and ultra-low gate

charge for applications requiring superior power

density and high efficiency.

S(3)

AM01476v1

Table 1: Device summary

Order code

Marking

Package

DPAK

Packing

STD3LN80K5

3LN80K5

Tape and reel

July 2016

DocID027714 Rev 2

1/15

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...15

中文翻译

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