Datasheet > STD3N30T4

STD3N30T4

更新时间： 2024-11-23 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
10页	145K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 300V V(BR)DSS \| 3A I(D) \| TO-252

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中文翻译

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数据手册

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STD3N30T4 数据手册

STD3N30

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTOR

TYPE

V_DSS

R_DS(on)

< 1.4 Ω

I_D

STD3N30

300 V

3 A

■

TYPICAL R_DS(on)= 1.1 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

APPLICATION ORIENTED

CHARACTERIZATION

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

APPLICATIONS

■

HIGH SPEED SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

MOTOR CONTROL, AUDIO AMPLIFIERS

INDUSTRIAL ACTUATORS

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

■

PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP

BALLASTS

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

300

V_{DG R}

V_GS

300

± 20

I_D

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

I_D

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.4

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

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STD3NA50T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 2.7A I(D) \| TO-252
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STD3NB30T4	STMICROELECTRONICS	获取价格	3.2A, 300V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD3NB50	STMICROELECTRONICS	获取价格	N - CHANNEL 500V - 2.5ohm - 3A - IPAK/DPAK PowerMESH MOSFET
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