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STD38NH02L PDF预览

STD38NH02L

更新时间: 2024-11-23 22:24:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
12页 528K
描述
N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STripFET⑩ III POWER MOSFET

STD38NH02L 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.35Is Samacsys:N
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:24 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):152 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD38NH02L 数据手册

 浏览型号STD38NH02L的Datasheet PDF文件第2页浏览型号STD38NH02L的Datasheet PDF文件第3页浏览型号STD38NH02L的Datasheet PDF文件第4页浏览型号STD38NH02L的Datasheet PDF文件第5页浏览型号STD38NH02L的Datasheet PDF文件第6页浏览型号STD38NH02L的Datasheet PDF文件第7页 
STD38NH02L  
N-CHANNEL 24V - 0.011 - 38A DPAK/IPAK  
STripFET™ III POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STD38NH02L  
24 V  
< 0.0135 Ω  
38 A  
TYPICAL R (on) = 0.011 @ 10 V  
DS  
TYPICAL R (on) = 0.015 @ 5 V  
DS  
R
* Qg INDUSTRY’s BENCHMARK  
DS(ON)  
3
3
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
LOW THRESHOLD DEVICE  
2
1
1
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
TO-251  
(Suffix “-1”)  
INTERNAL SCHEMATIC DIAGRAM  
DESCRIPTION  
The STD38NH02L utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology. This is  
suitable fot the most demanding DC-DC converter  
application where high efficiency is to be achieved.  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY DC/DC CONVERTES  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage Rating  
spike(1)  
V
Drain-source Voltage (V = 0)  
24  
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
24  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
38  
V
GS  
Drain Current (continuous) at T = 25°C  
I
A
C
D
Drain Current (continuous) at T = 100°C  
I
D
27  
A
C
(2)  
I
Drain Current (pulsed)  
152  
40  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.27  
250  
W/°C  
mJ  
(3)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
September 2003  
1/12  

STD38NH02L 替代型号

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