生命周期: | Obsolete | 零件包装代码: | TO-251 |
包装说明: | IN-LINE, R-PSIP-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
风险等级: | 5.84 | 其他特性: | LOGIC LEVEL COMPATIBLE, LOW THRESHOLD |
雪崩能效等级(Eas): | 250 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 24 V |
最大漏极电流 (Abs) (ID): | 38 A | 最大漏极电流 (ID): | 38 A |
最大漏源导通电阻: | 0.0135 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-251 | JESD-30 代码: | R-PSIP-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 40 W | 最大脉冲漏极电流 (IDM): | 152 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD38NH02LT4 | STMICROELECTRONICS |
获取价格 |
N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET | |
STD390BLK | VCC |
获取价格 |
LED Mounting Hardware, PLASTIC PACKAGE | |
STD3LN62K3 | STATEK |
获取价格 |
N-channel 620 V, 2.5 Ω , 2.5 A SuperMESH3⢠| |
STD3LN80K5 | STMICROELECTRONICS |
获取价格 |
N沟道800 V、2.75 Ohm典型值、2 A MDmesh K5功率MOSFET,DP | |
STD3N25 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD3N25-1 | STMICROELECTRONICS |
获取价格 |
3A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA, IPAK-3 | |
STD3N25T4 | STMICROELECTRONICS |
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3A, 250V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | |
STD3N30 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STD3N30-1 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 300V V(BR)DSS | 3A I(D) | TO-251 | |
STD3N30L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |