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STD38NH02L-1 PDF预览

STD38NH02L-1

更新时间: 2024-11-24 02:50:51
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
16页 497K
描述
N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET

STD38NH02L-1 技术参数

生命周期:Obsolete零件包装代码:TO-251
包装说明:IN-LINE, R-PSIP-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84其他特性:LOGIC LEVEL COMPATIBLE, LOW THRESHOLD
雪崩能效等级(Eas):250 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:24 V
最大漏极电流 (Abs) (ID):38 A最大漏极电流 (ID):38 A
最大漏源导通电阻:0.0135 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):152 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD38NH02L-1 数据手册

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STD38NH02L  
STD38NH02L-1  
N-channel 24V - 0.011- 38A - DPAK/IPAK  
STripFET™ III Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
STD38NH02L-1  
STD38NH02L  
24V  
24V  
<0.0135  
<0.0135Ω  
38A  
38A  
3
3
2
1
1
Logic level device  
R * Q Industry’s benchmark  
iPAK  
DPAK  
DS(ON)  
g
Conduction losses reduced  
Switching losses reduced  
Low threshold drive  
Description  
This device utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology.  
This is suitable fot the most demanding DC-DC  
converter application where high efficiency is to  
be achieved.  
Internal schematic diagram  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STD38NH02L-1  
STD38NH02LT4  
D38NH02L  
D38NH02L  
IPAK  
Tube  
DPAK  
Tape & reel  
July 2006  
Rev 8  
1/16  
www.st.com  
16  

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