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STD38NF03LT4 PDF预览

STD38NF03LT4

更新时间: 2024-09-20 21:18:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 开关脉冲晶体管
页数 文件大小 规格书
7页 300K
描述
38A, 30V, 0.0215ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3

STD38NF03LT4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-252AA包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.79
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):38 A
最大漏极电流 (ID):38 A最大漏源导通电阻:0.0215 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):152 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD38NF03LT4 数据手册

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STD38NF03L  
N-CHANNEL 30V - 0.011- 38A DPAK  
STripFET™ MOSFET  
PRELIMINARY DATA  
TYPE  
V
R
I
D
DSS  
DS(on)  
STD38NF03L  
30 V  
< 0.0145 Ω  
38 A  
TYPICAL R (on) = 0.011 Ω  
OPTIMIZED FOR HIGH SWITCHING  
OPERATIONS  
DS  
3
1
LOW THRESHOLD DRIVE  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
DPAK  
GATE CHARGE MINIMIZED  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronics unique “Single Feature Size™”  
strip-based process. The resulting transistor shows  
extremely high packing density for low on-resis-  
tance, rugged avalance characteristics and less crit-  
INTERNAL SCHEMATIC DIAGRAM  
ical alignment steps therefore  
a
remarkable  
manufacturing reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
38  
V
GS  
I
(*)  
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
27  
A
D
C
I
( )  
Drain Current (pulsed)  
152  
45  
A
DM  
P
Total Dissipation at T = 25°C  
W
TOT  
C
Derating Factor  
0.3  
W/°C  
T
Storage Temperature  
stg  
– 55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(•)Pulse width limited by safe operating area  
(*) Value Limited by Package  
October 2001  
1/7  

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