Datasheet > STD36P4LLF6

STD36P4LLF6

更新时间： 2024-11-25 14:58:07

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	411K
描述
P沟道40 V、0.0175 Ohm典型值、36 A STripFET F6，DPAK封装

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STD36P4LLF6 数据手册

STD36P4LLF6

P-channel 40 V, 0.0175 Ω typ.,36 A, STripFET™ F6

Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DS

R_DS(on)max.

I_D

P_TOT

STD36P4LLF6 40 V

0.0205 Ω

36 A 60 W

•

Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Figure 1: Internal schematic diagram

Applications

•

Switching applications

D(2, TAB)

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

For the P-channel Power MOSFET, current

polarity of voltages and current have to be

reversed.

S(3)

AM11258v1

Table 1: Device summary

Order code

Marking

Package

DPAK

Packaging

STD36P4LLF6

36P4LLF6

Tape and reel

March 2015

DocID025616 Rev 2

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

中文翻译

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