STD361

更新时间： 2024-11-24 12:56:19

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STD361 技术参数

STD361

Semiconductor

NPN Silicon Transistor

Description

• Extremely low collector-to-emitter saturation voltage

( V_CE(SAT)=0.2V Typ. @I_C/I_B=3A/150 ㎃)

• Suitable for low voltage large current drivers

• Switching Application

Ordering Information

Type NO.

Marking

Package Code

SOT-89

STD361

Outline Dimensions

unit : mm

PIN Connections

1. Base

2. Collector

3. Emitter

KST-8007-002

12 3 4

中文翻译

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型号	品牌	获取价格	描述	数据表
STD361O	KODENSHI	获取价格	Transistor,
STD36NH02L	STMICROELECTRONICS	获取价格	N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
STD36P4LLF6	STMICROELECTRONICS	获取价格	P沟道40 V、0.0175 Ohm典型值、36 A STripFET F6，DPAK封装
STD37N05TZ	STMICROELECTRONICS	获取价格	NPN power TRILINTON™
STD37N05TZT4	STMICROELECTRONICS	获取价格	NPN power TRILINTON™
STD38NF03L	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.013 ohm - 38A TO-252 STripFET POWER MOSFET
STD38NF03LT4	STMICROELECTRONICS	获取价格	38A, 30V, 0.0215ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD38NH02L	STMICROELECTRONICS	获取价格	N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STr
STD38NH02L_06	STMICROELECTRONICS	获取价格	N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET
STD38NH02L-1	STMICROELECTRONICS	获取价格	N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET