Datasheet > STD35P6LLF6

STD35P6LLF6

更新时间： 2024-11-11 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	813K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-17A;Vgs(th)(V):±20;漏源导通电阻:27mΩ@-10V

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数据手册

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STD35P6LLF6 数据手册

UMW

STD35P6LLF6

-60V P-Channel MOSFET

Features



V_DS(V) = -60V

R_DS(ON)< 27mΩ (V_GS= -10V)

R_DS(ON)< 35mΩ (V_GS= -4.5V)



Very lowon-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

D(2, TAB)

Applications



Switching applications

G(1)

S(3)

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DS

V_GS

I_D

Drain-source voltage

Gate-source voltage

± 20

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

I_D

(1)

I_DM

P_TOT

T_stg

T_j

140

Total dissipation at T_C= 25 °C

Storage temperature range

-55 to 175

°C

Operating junction temperature range

Notes:

⁽¹⁾Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

°C/W

R_thj-case

Thermal resistance junction-case max

2.14

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

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