Datasheet > STD35P6LLF6

STD35P6LLF6

更新时间： 2024-11-25 17:15:19

品牌	Logo	应用领域
友台半导体 - UMW		/
页数	文件大小	规格书
5页	813K
描述
种类:P-Channel;漏源电压（Vdss）:-60V;持续漏极电流（Id）（在25°C时）:-17A;Vgs(th)(V):±20;漏源导通电阻:27mΩ@-10V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STD35P6LLF6 数据手册

UMW

STD35P6LLF6

-60V P-Channel MOSFET

Features



V_DS(V) = -60V

R_DS(ON)< 27mΩ (V_GS= -10V)

R_DS(ON)< 35mΩ (V_GS= -4.5V)



Very lowon-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

D(2, TAB)

Applications



Switching applications

G(1)

S(3)

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

V_DS

V_GS

I_D

Drain-source voltage

Gate-source voltage

± 20

Drain current (continuous) at T_C= 25 °C

Drain current (continuous) at T_C= 100 °C

Drain current (pulsed)

I_D

(1)

I_DM

P_TOT

T_stg

T_j

140

Total dissipation at T_C= 25 °C

Storage temperature range

-55 to 175

°C

Operating junction temperature range

Notes:

⁽¹⁾Pulse width limited by safe operating area.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

°C/W

R_thj-case

Thermal resistance junction-case max

2.14

www.umw-ic.com

UTD Semiconductor Co.,Limited

12 3 4 5

中文翻译

下载PDF

与STD35P6LLF6相关器件

型号	品牌	获取价格	描述	数据表
STD361	AUK	获取价格	NPN Silicon Transistor
STD361O	KODENSHI	获取价格	Transistor,
STD36NH02L	STMICROELECTRONICS	获取价格	N-channel 24V - 0.011ohm - 30A - DPAK STripFET III Power MOSFET
STD36P4LLF6	STMICROELECTRONICS	获取价格	P沟道40 V、0.0175 Ohm典型值、36 A STripFET F6，DPAK封装
STD37N05TZ	STMICROELECTRONICS	获取价格	NPN power TRILINTON™
STD37N05TZT4	STMICROELECTRONICS	获取价格	NPN power TRILINTON™
STD38NF03L	STMICROELECTRONICS	获取价格	N - CHANNEL 30V - 0.013 ohm - 38A TO-252 STripFET POWER MOSFET
STD38NF03LT4	STMICROELECTRONICS	获取价格	38A, 30V, 0.0215ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD38NH02L	STMICROELECTRONICS	获取价格	N-CHANNEL 24V - 0.011 ohm - 38A DPAK/IPAK STr
STD38NH02L_06	STMICROELECTRONICS	获取价格	N-channel 24V - 0.011ohm - 38A - DPAK/IPAK STripFET TM III Power MOSFET