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STD35P6LLF6 PDF预览

STD35P6LLF6

更新时间: 2024-11-09 17:15:19
品牌 Logo 应用领域
友台半导体 - UMW /
页数 文件大小 规格书
5页 813K
描述
种类:P-Channel;漏源电压(Vdss):-60V;持续漏极电流(Id)(在25°C时):-17A;Vgs(th)(V):±20;漏源导通电阻:27mΩ@-10V

STD35P6LLF6 数据手册

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R
UMW  
STD35P6LLF6  
-60V P-Channel MOSFET  
Features  
VDS (V) = -60V  
RDS(ON) < 27m(VGS = -10V)  
RDS(ON) < 35m(VGS = -4.5V)  
Very lowon-resistance  
Very low gate charge  
High avalanche ruggedness  
Low gate drive power loss  
D(2, TAB)  
Applications  
Switching applications  
G(1)  
S(3)  
Electrical ratings  
Table 2: Absolute maximum ratings  
Symbol  
Parameter  
Value  
Unit  
V
VDS  
VGS  
ID  
Drain-source voltage  
Gate-source voltage  
60  
± 20  
35  
V
Drain current (continuous) at TC = 25 °C  
Drain current (continuous) at TC = 100 °C  
Drain current (pulsed)  
A
ID  
25  
A
(1)  
IDM  
PTOT  
Tstg  
Tj  
140  
70  
A
Total dissipation at TC = 25 °C  
Storage temperature range  
W
-55 to 175  
°C  
Operating junction temperature range  
Notes:  
(1)Pulse width limited by safe operating area.  
Table 3: Thermal data  
Symbol  
Parameter  
Value  
Unit  
°C/W  
Rthj-case  
Thermal resistance junction-case max  
2.14  
www.umw-ic.com  
UTD Semiconductor Co.,Limited  
1

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