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STD35NF3LL PDF预览

STD35NF3LL

更新时间: 2024-11-23 22:31:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
10页 470K
描述
N-CHANNEL 30V - 0.014 ohm - 35A IPAK/DPAK STripFET⑩ II POWER MOSFET

STD35NF3LL 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:TO-252AA
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.7Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180121
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:DPAK (TO-252)_2
Samacsys Released Date:2015-07-12 18:13:02Is Samacsys:N
雪崩能效等级(Eas):300 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.0215 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD35NF3LL 数据手册

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STD35NF3LL  
STD35NF3LL-1  
N-CHANNEL 30V - 0.014 - 35A IPAK/DPAK  
STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STD35NF3LL  
STD35NF3LL-1  
30 V  
30 V  
< 0.0195 Ω  
< 0.0195 Ω  
35 A  
35 A  
TYPICAL R (on) = 0.016 @ 4.5V  
DS  
OPTIMAL R (on) x Qg TRADE-OFF @ 4.5V  
DS  
3
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
LOW THRESHOLD DRIVE  
3
2
1
1
IPAK  
DPAK  
TO-252  
(Suffix “T4”)  
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
TO-251  
(Suffix “-1”)  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
This application specific Power MOSFET is the third  
genaration of STMicroelectronis unique "Single Feature  
Size™" strip-based process. The resulting transistor  
shows the best trade-off between on-resistance and gate  
charge. When used as high and low side in buck  
regulators, it gives the best performance in terms of both  
conduction and switching losses. This is extremely  
important for motherboards where fast switching and  
high efficiency are of paramount importance.  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY DC/DC  
CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
30  
V
DGR  
GS  
V
Gate- source Voltage  
± 16  
35  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
25  
A
D
C
I
()  
Drain Current (pulsed)  
140  
50  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.33  
300  
W/°C  
mJ  
(1)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
o
() Pulse width limited by safe operating area.  
(1) Starting T = 25 C, I = 17.5 A, V = 24 V  
j
D
DD  
February 2002  
1/10  
.

STD35NF3LL 替代型号

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