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STP55NF06 PDF预览

STP55NF06

更新时间: 2024-11-17 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 486K
描述
N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220FP/I PAK/DPAK STripFET⑩ II POWER MOSFET

STP55NF06 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-220AB包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.68
雪崩能效等级(Eas):340 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):100 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STP55NF06 数据手册

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STB55NF06 STB55NF06-1  
STP55NF06 STP55NF06FP  
²
N-CHANNEL 60V - 0.015 - 50A TO-220/TO-220FP/I PAK/D²PAK  
STripFET™ II POWER MOSFET  
V
R
I
D
TYPE  
DSS  
DS(on)  
TO-220FP  
STP55NF06  
STB55NF06-1  
STB55NF06  
STP55NF06FP  
60 V  
60 V  
60 V  
60 V  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
50 A  
50 A  
50 A  
50 A(*)  
3
2
3
TO-220  
2
1
1
TYPICAL R (on) = 0.015 Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4”)  
3
1
3
2
1
²
D PAK  
²
I PAK  
THROUGH-HOLE I²PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX “-1")  
TO-263  
(Suffix “T4”)  
TO-262  
(Suffix “-1”)  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
This Power MOSFET is the latest development of ST-  
Microelectronis unique "Single Feature Size™" strip-  
based process. The resulting transistor shows ex-  
tremely high packing density for low on-resistance,  
rugged avalanche characteristics and less critical  
alignment steps therefore a remarkable manufactur-  
ing reproducibility.  
APPLICATIONS  
HIGH CURRENT, HIGH SWITCHING SPEED  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP_B55NF06(-1)  
STP55NF06FP  
V
Drain-source Voltage (V = 0)  
60  
60  
V
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
GS  
Gate- source Voltage  
± 20  
V
I
I
Drain Current (continuous) at T = 25°C  
50  
35  
200  
110  
0.73  
50(*)  
35(*)  
200(*)  
30  
A
A
A
W
W/°C  
V/ns  
mJ  
D
C
Drain Current (continuous) at T = 100°C  
D
C
I
()  
Drain Current (pulsed)  
DM  
P
Total Dissipation at T = 25°C  
tot  
C
Derating Factor  
0.2  
(1)  
(2)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
7
dv/dt  
E
350  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(1)  
() Pulse width limited by safe operating area  
(*)Refer to soa for the max allowable current value on FP-type due  
to Rth value  
I
50A, di/dt 400A/µs, V V  
, T T  
(BR)DSS j JMAX  
SD  
(2) Starting  
DD  
o
T = 25 C, I = 25A, V = 30V  
j
D
DD  
March 2003  
1/12  
.

STP55NF06 替代型号

型号 品牌 替代类型 描述 数据表
STB55NF06T4 STMICROELECTRONICS

类似代替

N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO
STP60NF06 STMICROELECTRONICS

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N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP16NF06L STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220F

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