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STD35P6LLF6 PDF预览

STD35P6LLF6

更新时间: 2024-11-11 14:58:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
16页 748K
描述
P沟道60 V、0.025 Ohm典型值、35 A STripFET F6功率MOSFET,DPAK封装

STD35P6LLF6 数据手册

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STD35P6LLF6  
P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6  
Power MOSFET in a DPAK package  
Datasheet - production data  
Features  
Order code  
VDSS RDS(on) max.  
0.028 Ω  
ID  
PTOT  
STD35P6LLF6 60 V  
35 A 70 W  
Very low on-resistance  
Very low gate charge  
High avalanche ruggedness  
Low gate drive power loss  
Figure 1: Internal schematic diagram  
Applications  
Switching applications  
D(2, TAB)  
Description  
This device is a P-channel Power MOSFET  
developed using the STripFET™ F6 technology,  
with a new trench gate structure. The resulting  
Power MOSFET exhibits very low RDS(on) in all  
packages.  
G(1)  
S(3)  
AM11258v1  
Table 1: Device summary  
Order code  
Marking  
35P6LLF6  
Package  
Packaging  
STD35P6LLF6  
DPAK  
Tape and Reel  
April 2017  
DocID025600 Rev 3  
1/16  
www.st.com  
This is information on a product in full production.  

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