Datasheet > STD35P6LLF6

STD35P6LLF6

更新时间： 2024-11-25 14:58:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	748K
描述
P沟道60 V、0.025 Ohm典型值、35 A STripFET F6功率MOSFET，DPAK封装

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STD35P6LLF6 数据手册

STD35P6LLF6

P-channel 60 V, 0.025 Ω typ., 35 A STripFET™ F6

Power MOSFET in a DPAK package

Datasheet - production data

Features

Order code

V_DSSR_DS(on)max.

0.028 Ω

I_D

P_TOT

STD35P6LLF6 60 V

35 A 70 W



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Figure 1: Internal schematic diagram

Applications



Switching applications

D(2, TAB)

Description

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits very low R_DS(on)in all

packages.

G(1)

S(3)

AM11258v1

Table 1: Device summary

Order code

Marking

35P6LLF6

Package

Packaging

STD35P6LLF6

DPAK

Tape and Reel

April 2017

DocID025600 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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