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STD35NF06T4 PDF预览

STD35NF06T4

更新时间: 2024-11-24 04:01:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
13页 320K
描述
N-channel 60V - 0.018ヘ - 35A - DPAK STripFET⑩ II Power MOSFET

STD35NF06T4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.69
雪崩能效等级(Eas):130 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):35 A最大漏极电流 (ID):35 A
最大漏源导通电阻:0.02 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):80 W最大脉冲漏极电流 (IDM):140 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD35NF06T4 数据手册

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STD35NF06  
N-channel 60V - 0.018- 35A - DPAK  
STripFET™ II Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
35A  
STD35NF06  
60V  
<0.020  
Exceptional dv/dt capability  
3
Application oriented characterization  
100% avalanche tested  
1
DPAK  
Description  
This Power MOSFET is the latest development of  
STMicroelectronics unique "Single Feature  
Size™" strip-based process. The resulting  
transistor shows extremely high packing density  
for low on-resistance, rugged avalanche  
characteristics and less critical alignment steps  
therefore a remarkable manufacturing  
reproducibility.  
Internal schematic diagram  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STD35NF06T4  
D35NF06  
DPAK  
Tape & reel  
February 2007  
Rev 4  
1/13  
www.st.com  
13  

STD35NF06T4 替代型号

型号 品牌 替代类型 描述 数据表
STB55NF06T4 STMICROELECTRONICS

类似代替

N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO
STP60NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP55NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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