SI9926BDY

更新时间： 2024-09-09 22:33:55

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	184K
描述
Dual N-Channel 2.5-V (G-S) MOSFET

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SI9926BDY 数据手册

SPICE Device Model Si9926BDY

Vishay Siliconix

Dual N-Channel 2.5-V (G-S) MOSFET

CHARACTERISTICS

• N-Channel Vertical DMOS

• Macro Model (Subcircuit Model)

• Level 3 MOS

• Apply for both Linear and Switching Application

• Accurate over the −55 to 125°C Temperature Range

• Model the Gate Charge, Transient, and Diode Reverse Recovery

Characteristics

DESCRIPTION

The attached spice model describes the typical electrical

characteristics of the n-channel vertical DMOS. The subcircuit

model is extracted and optimized over the −55 to 125°C

temperature ranges under the pulsed 0 to 5V gate drive. The

saturated output impedance is best fit at the gate bias near the

threshold voltage.

A novel gate-to-drain feedback capacitance network is used to

model the gate charge characteristics while avoiding convergence

difficulties of the switched C_gdmodel. All model parameter values

are optimized to provide a best fit to the measured electrical data

and are not intended as an exact physical interpretation of the

device.

SUBCIRCUIT MODEL SCHEMATIC

This document is intended as a SPICE modeling guideline and does not constitute a commercial product data sheet. Designers should refer to the appropriate

data sheet of the same number for guaranteed specification limits.

Document Number: 72413

01-Jun-04

www.vishay.com

12 3

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SI9926BDY 替代型号

型号	品牌	替代类型	描述	数据表
SI9926BDY-E3	VISHAY	类似代替	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9926BDY-T1-GE3	VISHAY	功能相似	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9956DY	VISHAY	功能相似	Dual N-Channel 20-V (D-S) MOSFET

与SI9926BDY相关器件

型号	品牌	获取价格	描述	数据表
SI9926BDY (KI9926BDY)	KEXIN	获取价格	Dual N-Channel MOSFET
SI9926BDY-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9926BDY-T1	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
SI9926BDY-T1-E3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9926BDY-T1-GE3	VISHAY	获取价格	Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal
SI9926CDY	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI9926CDY-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI9926CDY-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI9926DY	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrench MOSFET
SI9926DY	TYSEMI	获取价格	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V