SI9926CDY

更新时间： 2024-09-14 09:25:39

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
10页	255K
描述
Dual N-Channel 20-V (D-S) MOSFET

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New Product

Si9926CDY

Vishay Siliconix

Dual N-Channel 20-V (D-S) MOSFET

FEATURES

PRODUCT SUMMARY

•

Halogen-free According to IEC 61249-2-21

V_DS(V)

R_DS(on)(Ω)

Q_g(Typ.)

_D(A)^a

Definition

•

TrenchFET^®Power MOSFET

100 % UIS Tested

Compliant to RoHS Directive 2002/95/EC

0.018 at V_GS= 4.5 V

0.022 at V_GS= 2.5 V

10 nC

APPLICATIONS

•

DC/DC Converter

- Game Machine

- PC

SO-8

Top View

Ordering Information:

Si9926CDY-T1-E3 (Lead (Pb)-free)

Si9926CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)

N-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

V_DS

V_GS

8^a

_C= 25 °C

_C= 70 °C

8^a

Continuous Drain Current (T_J= 150 °C)

I_D

8^{a, b, c}

6.7^{b, c}

2.6

1.7^{b, c}

T_A= 25 °C

T_A= 70 °C

Pulsed Drain Current

I_DM

I_S

T_C= 25 °C

Continuous Source-Drain Diode Current

_A= 25 °C

Single Pulse Avalanche Current

Single Pulse Avalanche Energy

I_AS

E_AS

L = 0.1 mH

1.25

3.1

2^{b, c}

1.3^{b, c}

T_C= 25 °C

T_C= 70 °C

T_A= 25 °C

T_A= 70 °C

P_D

Maximum Power Dissipation

T_J, T_stg

°C

Operating Junction and Storage Temperature Range

- 55 to 150

THERMAL RESISTANCE RATINGS

Parameter

Symbol

R_thJA

R_thJF

Typical

Maximum

Unit

Maximum Junction-to-Ambient^{a, c, d}

t ≤ 10 s

Steady State

62.5

°C/W

Maximum Junction-to-Foot (Drain)

Notes:

a. Package limited, T_C= 25 °C.

b. Surface Mounted on 1" x 1" FR4 board.

c. t = 10 s.

d. Maximum under Steady State conditions is 110 °C/W.

Document Number: 68606

S09-0704-Rev. B, 27-Apr-09

www.vishay.com

12 3 4 5 6 7...10

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与SI9926CDY相关器件

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SI9926CDY-T1-E3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI9926CDY-T1-GE3	VISHAY	获取价格	Dual N-Channel 20-V (D-S) MOSFET
SI9926DY	FAIRCHILD	获取价格	Dual N-Channel 2.5V Specified PowerTrench MOSFET
SI9926DY	TYSEMI	获取价格	Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V
SI9926DY	VISHAY	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
SI9926DY	KEXIN	获取价格	Dual N-Channel MOSFET
SI9926DYD84Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
SI9926DYL86Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
SI9926DYS62Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met
SI9926DY-T1	VISHAY	获取价格	Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal