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SI9926DY-T1-E3 PDF预览

SI9926DY-T1-E3

更新时间: 2024-11-27 15:51:15
品牌 Logo 应用领域
威世 - VISHAY 脉冲光电二极管晶体管
页数 文件大小 规格书
5页 61K
描述
Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SOP-8

SI9926DY-T1-E3 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.69Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管元件材料:SILICONBase Number Matches:1

SI9926DY-T1-E3 数据手册

 浏览型号SI9926DY-T1-E3的Datasheet PDF文件第2页浏览型号SI9926DY-T1-E3的Datasheet PDF文件第3页浏览型号SI9926DY-T1-E3的Datasheet PDF文件第4页浏览型号SI9926DY-T1-E3的Datasheet PDF文件第5页 
Si9926DY  
Vishay Siliconix  
Dual N-Channel 2.5-V (G-S) MOSFET  
FEATURES  
PRODUCT SUMMARY  
D 100% Rg Tested  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.03 @ V = 4.5 V  
6
GS  
20  
0.04 @ V = 2.5 V  
GS  
5.2  
D
1
D
1
D
2
D
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
S
1
S
2
Ordering Information: Si9926DY  
Si9926DY-T1 (with Tape and Reel)  
N-Channel MOSFET  
N-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
Limit  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
"10  
6
DS  
GS  
V
V
T
= 25_C  
= 70_C  
A
a
Continuous Drain Current (T = 150_C)  
I
J
D
T
A
4.8  
A
Pulsed Drain Current  
I
20  
DM  
a
Continuous Source Current (Diode Conduction)  
I
S
1.7  
T
= 25_C  
= 70_C  
2.0  
A
a
Maximum Power Dissipation  
P
D
W
T
A
1.3  
Operating Junction and Storage Temperature Range  
T , T  
-55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Limit  
Unit  
a
Maximum Junction-to-Ambient  
R
thJA  
62.5  
_C/W  
Notes  
a. Surface Mounted on FR4 Board, t v 10 sec.  
Document Number: 70162  
S-31726—Rev. G, 18-Aug-03  
www.vishay.com  
1
 

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