Datasheet > SLP80N06T

SLP80N06T

更新时间： 2024-11-19 18:09:43

品牌	Logo	应用领域
美浦森 - Maplesemi		/
页数	文件大小	规格书
8页	984K
描述
TO-220C

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中文翻译

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SLP80N06T 数据手册

SLP80N06T

60V N -Channel MOSFET

Features

General Description

- N-Channel:60V 80A

R_DS(on)Typ= 6.0 mΩ@V_GS= 10V

This Power MOSFET is produced using Msemitek‘s

advanced TRENCH technology.

This advanced technology has been especially tailored

to minimize conduction loss, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode.

- Very Low On-resistance R_DS(ON)

- Low Crss

- Fast switching

- 100% avalanche tested

- Improved dv/dt capability

Application

PWM Application

Load Switch

Power Management

TO-220C

SLP80N06T

Absolute Maximum Ratings

T_C= 25°C unless otherwise noted

Symbol

Parameter

SLP80N06T

Units

Drain-Source Voltage

V_DSS

Drain Current

- Continuous (T_C= 25℃)

I_D

- Continuous (T_C= 100℃)

(Note 1)

I_DM

V_GSS

E_AS

Drain Current

- Pulsed

320

Gate-Source Voltage

(Note 2)

Single Pulsed Avalanche Energy

Power Dissipation (T_C= 25℃)

324

130

P_D

R _θJC

T_J, T_STG

Thermal Resistance, Junction to Case

Operating and Storage Temperature Range

1.15

℃/W

℃

-55 to +150

Maximum lead temperature for soldering purposes,

1/8" from case for 5 seconds

T_L

300

℃

* Drain current limited by maximum junction temperature.

Msemitek Co., Ltd

http://www.msemitek.com

Rev2.2 Aug. 2022

12 3 4 5 6 7 8

中文翻译

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