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SLP80N06T PDF预览

SLP80N06T

更新时间: 2024-11-06 18:09:43
品牌 Logo 应用领域
美浦森 - Maplesemi /
页数 文件大小 规格书
8页 984K
描述
TO-220C

SLP80N06T 数据手册

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SLP80N06T  
60V N -Channel MOSFET  
Features  
General Description  
- N-Channel:60V 80A  
RDS(on)Typ= 6.0 mΩ@VGS = 10V  
This Power MOSFET is produced using Msemitek‘s  
advanced TRENCH technology.  
This advanced technology has been especially tailored  
to minimize conduction loss, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode.  
- Very Low On-resistance RDS(ON)  
- Low Crss  
- Fast switching  
- 100% avalanche tested  
- Improved dv/dt capability  
Application  
PWM Application  
Load Switch  
Power Management  
D
G
TO-220C  
S
SLP80N06T  
Absolute Maximum Ratings  
TC = 25°C unless otherwise noted  
Symbol  
Parameter  
SLP80N06T  
Units  
Drain-Source Voltage  
60  
80  
50  
V
VDSS  
Drain Current  
- Continuous (TC = 25)  
A
A
ID  
- Continuous (TC = 100)  
(Note 1)  
IDM  
VGSS  
EAS  
Drain Current  
- Pulsed  
320  
A
Gate-Source Voltage  
20  
±
V
(Note 2)  
Single Pulsed Avalanche Energy  
Power Dissipation (TC = 25)  
324  
130  
mJ  
W
PD  
R θJC  
TJ, TSTG  
Thermal Resistance, Junction to Case  
Operating and Storage Temperature Range  
1.15  
/W  
-55 to +150  
Maximum lead temperature for soldering purposes,  
1/8" from case for 5 seconds  
TL  
300  
* Drain current limited by maximum junction temperature.  
Msemitek Co., Ltd  
http://www.msemitek.com  
Rev2.2 Aug. 2022  

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