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SI9933CDY-T1-GE3 PDF预览

SI9933CDY-T1-GE3

更新时间: 2024-09-14 12:27:39
品牌 Logo 应用领域
威世 - VISHAY 晶体小信号场效应晶体管开关光电二极管PC
页数 文件大小 规格书
10页 276K
描述
Dual P-Channel 20-V (D-S) MOSFET

SI9933CDY-T1-GE3 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:0.86Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:5330
Samacsys Pin Count:8Samacsys Part Category:Integrated Circuit
Samacsys Package Category:Small Outline PackagesSamacsys Footprint Name:8-Pin Narrow SOIC
Samacsys Released Date:2015-04-16 09:48:08Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:0.058 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
湿度敏感等级:1元件数量:2
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):3.1 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:PURE MATTE TIN端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI9933CDY-T1-GE3 数据手册

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New Product  
Si9933CDY  
Vishay Siliconix  
Dual P-Channel 20-V (D-S) MOSFET  
FEATURES  
Halogen-free Option Available  
TrenchFET® Power MOSFET  
100 % Rg and UIS Tested  
PRODUCT SUMMARY  
VDS (V)  
RDS(on) (Ω)  
Qg (Typ.)  
I
D (A)a, e  
RoHS  
0.058 at VGS = - 4.5 V  
0.094 at VGS = - 2.5 V  
- 4  
- 4  
COMPLIANT  
- 20  
8
APPLICATIONS  
Load Switch  
DC/DC Converter  
S
1
S
2
SO-8  
S
G
S
D
1
1
2
3
4
8
1
1
2
2
D
1
7
6
5
G
G
2
1
D
2
G
D
2
Top View  
D
D
2
1
Ordering Information: Si9933CDY-T1-E3 (Lead (Pb)-free)  
Si9933CDY-T1-GE3 (Lead (Pb)-free and Halogen-free)  
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS T = 25 °C, unless otherwise noted  
A
Parameter  
Symbol  
VDS  
Limit  
- 20  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
VGS  
12  
T
C = 25 °C  
- 4e  
- 4e  
- 4b, c, e  
- 3.8b, c  
- 20  
TC = 70 °C  
TA = 25 °C  
TA = 70 °C  
Continuous Drain Current (TJ = 150 °C)  
ID  
A
IDM  
IS  
Pulsed Drain Current (10 µs Pulse Width)  
Source-Drain Current Diode Current  
T
C = 25 °C  
A = 25 °C  
- 2.5  
- 1.7b, c  
- 6  
T
IAS  
Single Pulse Avalanche Current  
Single-Pulse Avalanche Energy  
L = 0.1 mH  
EAS  
1.8  
mJ  
W
TC = 25 °C  
TC = 70 °C  
TA = 25 °C  
3.1  
2
2b, c  
PD  
Maximum Power Dissipation  
1.28b, c  
TA = 70 °C  
TJ, Tstg  
Operating Junction and Storage Temperature Range  
- 50 to 150  
°C  
THERMAL RESISTANCE RATINGS  
Limit  
Parameter  
Maximum Junction-to-Ambientb, d  
Maximum Junction-to-Foot (Drain)  
Symbol  
RthJA  
RthJF  
Typical  
52  
Maximum  
62.5  
Unit  
t 10 s  
Steady State  
°C/W  
32  
40  
Notes:  
a. Based on TC = 25 °C.  
b. Surface Mounted on 1" x 1" FR4 board.  
c. t = 10 s.  
d. Maximum under Steady State conditions is 110 °C/W.  
e. Package Limited.  
Document Number: 68791  
S-81729-Rev. A, 04-Aug-08  
www.vishay.com  
1

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