SI9934DY-NL

更新时间： 2024-09-15 13:13:31

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数	文件大小	规格书
3页	54K
描述
Transistor

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中文翻译

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技术参数
数据手册

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SI9934DY-NL 技术参数

是否Rohs认证：	符合	生命周期：	Obsolete
Reach Compliance Code：	unknown	风险等级：	5.84
最大漏极电流 (Abs) (ID)：	5 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	P-CHANNEL	最大功率耗散 (Abs)：	2 W
子类别：	Other Transistors	表面贴装：	YES
Base Number Matches：	1

SI9934DY-NL 数据手册

January 2001

Si9934DY

Dual P-Channel 2.5V Specified PowerTrench MOSFET

General Description

Features

This P-Channel 2.5V specified MOSFET is a rugged

gate version of Fairchild Semiconductor’s advanced

PowerTrench process. It has been optimized for power

management applications with a wide range of gate

drive voltage (2.5V – 12V).

• –5 A, –20 V, R_DS(ON)= 50 mΩ @ V_GS= –4.5 V

R_DS(ON)= 74 mΩ @ V_GS= –2.5 V

• Extended V_GSSrange (±12V) for battery applications

• Low gate charge

Applications

•

Load switch

• High performance trench technology for extremely

low R_DS(ON)

Motor drive

DC/DC conversion

Power management

• High power and current handling capability

SO-8

Pin 1

Absolute Maximum Ratings T_A=25^oC unless otherwise noted

Symbol

V_DSS

Parameter

Drain-Source Voltage

Ratings

Units

–20

±12

–5

V_GSS

Gate-Source Voltage

I_D

Drain Current – Continuous

– Pulsed

(Note 1a)

–30

P_D

Power Dissipation for Dual Operation

Power Dissipation for Single Operation

(Note 1a)

(Note 1b)

(Note 1c)

1.6

0.9

T_J, T_STG

Operating and Storage Junction Temperature Range

–55 to +175

°C

Thermal Characteristics

Thermal Resistance, Junction-to-Ambient

(Note 1a)

(Note 1)

R_θJA

°C/W

Thermal Resistance, Junction-to-Case

R_θJC

Package Marking and Ordering Information

Device Marking

Device

Reel Size

Tape width

Quantity

9934

Si9934DY

13’’

12mm

2500 units

Si9934DY Rev A(W)

2001 Fairchild Semiconductor International

12 3

中文翻译

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