生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.67 | Is Samacsys: | N |
最小漏源击穿电压: | 20 V | 最大漏极电流 (ID): | 3.4 A |
最大漏源导通电阻: | 0.19 Ω | JESD-30 代码: | R-PDSO-G8 |
元件数量: | 2 | 端子数量: | 8 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | P-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9933DY-E3 | VISHAY |
获取价格 |
Transistor | |
SI9934BDY | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI9934BDY_06 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI9934BDY-E3 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI9934BDY-T1-E3 | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI9934BDY-T1-GE3 | VISHAY |
获取价格 |
TRANSISTOR 4800 mA, 12 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND | |
SI9934DY | VISHAY |
获取价格 |
Dual P-Channel 2.5-V (G-S) MOSFET | |
SI9934DY | FAIRCHILD |
获取价格 |
Dual P-Channel 2.5V Specified PowerTrench MOSFET | |
SI9934DYD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 5A I(D), 20V, 0.05ohm, 2-Element, P-Channel, Silicon, Metal | |
SI9934DY-E3 | VISHAY |
获取价格 |
Transistor |