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SI9926DYD84Z PDF预览

SI9926DYD84Z

更新时间: 2024-09-15 10:20:59
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲光电二极管晶体管
页数 文件大小 规格书
5页 85K
描述
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9926DYD84Z 技术参数

生命周期:Obsolete零件包装代码:SOT
包装说明:SMALL OUTLINE, R-PDSO-G8针数:8
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.82
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (ID):6.5 A最大漏源导通电阻:0.03 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G8
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大脉冲漏极电流 (IDM):20 A认证状态:Not Qualified
表面贴装:YES端子形式:GULL WING
端子位置:DUAL晶体管应用:SWITCHING
晶体管元件材料:SILICON

SI9926DYD84Z 数据手册

 浏览型号SI9926DYD84Z的Datasheet PDF文件第2页浏览型号SI9926DYD84Z的Datasheet PDF文件第3页浏览型号SI9926DYD84Z的Datasheet PDF文件第4页浏览型号SI9926DYD84Z的Datasheet PDF文件第5页 
January 2001  
Si9926DY  
Dual N-Channel 2.5V Specified PowerTrench MOSFET  
Features  
General Description  
These N-Channel 2.5V specified MOSFETs use  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications with a wide range of gate drive voltage  
(2.5V – 10V).  
6.5 A, 20 V.  
R
DS(ON) = 0.030 @ VGS = 4.5 V  
RDS(ON) = 0.043 @ VGS = 2.5 V.  
Optimized for use in battery protection circuits  
±10 VGSS allows for wide operating voltage range  
Applications  
Low gate charge  
Battery protection  
Load switch  
Power management  
D1  
D1  
5
6
7
8
4
3
2
1
D2  
Q1  
Q2  
D2  
G1  
S1  
SO-8  
G2  
S2  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
20  
VGSS  
ID  
Gate-Source Voltage  
V
A
±10  
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
6.5  
20  
PD  
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
W
(Note 1a)  
(Note 1b)  
1.6  
1
(Note 1c)  
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
Thermal Characteristics  
Thermal Resistance, Junction-to-Ambient  
Thermal Resistance, Junction-to-Case  
(Note 1a)  
(Note 1)  
78  
40  
RθJA  
°C/W  
°C/W  
RθJC  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
9926  
Si9926DY  
13’’  
12mm  
2500 units  
Si9926DY Rev A (W)  
2001 Fairchild Semiconductor International  

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