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SI9933ADY_NL PDF预览

SI9933ADY_NL

更新时间: 2024-09-14 13:13:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
3页 40K
描述
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.075ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

SI9933ADY_NL 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:SOT包装说明:SO-8
针数:8Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.29.00.95
风险等级:5.29Is Samacsys:N
配置:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE最小漏源击穿电压:20 V
最大漏极电流 (Abs) (ID):3.4 A最大漏极电流 (ID):3.4 A
最大漏源导通电阻:0.075 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G8JESD-609代码:e3
元件数量:2端子数量:8
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):2 W
最大脉冲漏极电流 (IDM):16 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

SI9933ADY_NL 数据手册

 浏览型号SI9933ADY_NL的Datasheet PDF文件第2页浏览型号SI9933ADY_NL的Datasheet PDF文件第3页 
January 2001  
Si9933ADY  
Dual P-Channel PowerTrenchÒ MOSFET  
General Description  
Features  
This P-Channel MOSFET is a rugged gate version of  
Fairchild Semiconductor’s advanced PowerTrench  
process. It has been optimized for power management  
applications with a wide range of gate drive voltage  
(2.5V – 12V).  
· –5 A, –20 V, RDS(ON) = 75 mW @ VGS = –4.5 V  
RDS(ON) = 105 mW @ VGS = –3.0 V  
RDS(ON) = 115 mW @ VGS = –2.7 V  
· Extended VGSS range (±12V) for battery applications  
· Low gate charge  
Applications  
·
·
·
·
Load switch  
· High performance trench technology for extremely  
low RDS(ON)  
Motor drive  
DC/DC conversion  
Power management  
· High power and current handling capability  
5
6
7
8
4
3
2
1
Q1  
Q2  
Absolute Maximum Ratings TA=25oC unless otherwise noted  
Symbol  
VDSS  
Parameter  
Drain-Source Voltage  
Ratings  
Units  
V
–20  
±12  
–3.4  
–16  
VGSS  
ID  
Gate-Source Voltage  
V
A
Drain Current – Continuous  
– Pulsed  
(Note 1a)  
PD  
W
Power Dissipation for Dual Operation  
Power Dissipation for Single Operation  
2
(Note 1a)  
(Note 1b)  
(Note 1c)  
1.6  
1
0.9  
TJ, TSTG  
Operating and Storage Junction Temperature Range  
–55 to +175  
°C  
Thermal Characteristics  
RqJA  
Thermal Resistance, Junction-to-Ambient  
(Note 1a)  
(Note 1)  
78  
40  
°C/W  
°C/W  
RqJC  
Thermal Resistance, Junction-to-Case  
Package Marking and Ordering Information  
Device Marking  
Device  
Reel Size  
Tape width  
Quantity  
9933A  
Si9933ADY  
13’’  
12mm  
2500 units  
Ó2001 Fairchild Semiconductor International  
Si9933ADY Rev A(W)  

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