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SI9933BDY PDF预览

SI9933BDY

更新时间: 2024-09-13 22:33:55
品牌 Logo 应用领域
威世 - VISHAY /
页数 文件大小 规格书
5页 71K
描述
Dual P-Channel 2.5-V (G-S) MOSFET

SI9933BDY 数据手册

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Si9933BDY  
Vishay Siliconix  
New Product  
Dual P-Channel 2.5-V (G-S) MOSFET  
PRODUCT SUMMARY  
VDS (V)  
rDS(on) (W)  
ID (A)  
0.06 @ V = 4.5 V  
4.7  
3.7  
GS  
20  
0.10 @ V = 2.5  
V
GS  
S
1
S
2
SO-8  
S
G
S
D
1
D
1
D
2
D
2
1
2
3
4
8
7
6
5
1
1
2
2
G
G
2
1
G
Top View  
Ordering Information: Si9933BDY—E3 (Lead Free)  
Si9933BDY-T1—E3 (Lead Free with Tape and Reel)  
D
1
D
2
P-Channel MOSFET  
P-Channel MOSFET  
ABSOLUTE MAXIMUM RATINGS (T = 25_C UNLESS OTHERWISE NOTED)  
A
Parameter  
Symbol  
10 secs  
Steady State  
Unit  
Drain-Source Voltage  
Gate-Source Voltage  
V
20  
DS  
V
V
GS  
"12  
T
= 25_C  
= 70_C  
3.6  
2.8  
4.7  
3.8  
A
a
Continuous Drain Current (T = 150_C)  
I
D
J
T
A
A
Pulsed Drain Current  
I
DM  
20  
a
continuous Source Current (Diode Conduction)  
I
1.7  
2.0  
0.9  
1.1  
S
T
= 25_C  
= 70_C  
A
a
Maximum Power Dissipation  
P
W
D
T
A
1.3  
0.7  
Operating Junction and Storage Temperature Range  
T , T  
55 to 150  
_C  
J
stg  
THERMAL RESISTANCE RATINGS  
Parameter  
Symbol  
Typical  
Maximum  
Unit  
t v 10 sec  
Steady State  
Steady State  
55  
90  
33  
62.5  
110  
40  
a
Maximum Junction-to-Ambient  
R
thJA  
R
thJF  
_C/W  
Maximum Junction-to-Foot (Drain)  
Notes  
a. Surface Mounted on 1” x 1” FR4 Board.  
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm  
Document Number: 72748  
S-40237—Rev. A, 16-Feb-04  
www.vishay.com  
1

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