Datasheet > RM2301

RM2301

更新时间： 2024-10-15 18:09:39

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	507K
描述
Vdss (V) : 20 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 64 mOhms;Total Gate Charge (nQ) typ : 3.3 nQ;Maximum Power Dissipation (W) : 1 W;Vgs(th) (typ) : 0.7 V;Input Capacitance (Ciss) : 405 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RM2301 数据手册

RM2301

P-Channel Enhancement Mode Power MOSFET

Description

The RM2301 uses advanced trench technology to provide

excellent R_DS(ON), low gate charge and operation with gate

voltages as low as 2.5V. This device is suitable for use as a

load switch or in PWM applications.

General Features

V_DS= -20V,I_D= -3A

Schematic diagram

R_DS(ON)< 140mΩ @ V_GS=-2.5V

R_DS(ON)< 110mΩ @ V_GS=-4.5V

High power and current handing capability

Lead free product is acquired

Surface mount package

Marking and pin assignment

Application

PWM applications

Load switch

SOT-23 top view

Tape width

Power management

Halogen-free

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Quantity

3000 units

RM2301

SOT-23

Ø180mm

8 mm

Absolute Maximum Ratings (T_A=25 unless otherwise noted)

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

-20

V^DS

Gate-Source Voltage

±12

V^GS

Drain Current-Continuous

Drain Current -Pulsed^{(Note 1)}

-3

I_D

-10

I_DM

Maximum Power Dissipation

P_D

Operating Junction and Storage Temperature Range

-55 To 150

T_J,T_STG

Thermal Characteristic

Thermal Resistance,Junction-to-Ambient ^{(Note 2)}

R_θJA

125

Electrical Characteristics (T_A=25 unless otherwise noted)

Parameter

Symbol

Condition

Min Typ Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSS

I_DSS

V_GS=0V I_D=-250μA

V_DS=-20V,V_GS=0V

-20

-24

-1

μA

2019-04/15

REV:

12 3 4 5 6 7

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与RM2301相关器件

型号	品牌	获取价格	描述	数据表
RM2301C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.3 A;Rds-on (typ) (mOhms) : 90 mOhms;Total Gate Charge (nQ
RM2301E	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.6 A;Rds-on (typ) (mOhms) : 87 mOhms;Total Gate Charge (nQ
RM2301S3	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.8 A;Rds-on (typ) (mOhms) : 90 mOhms;Total Gate Charge (nQ
RM2301S9	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 3.0 A;Rds-on (typ) (mOhms) : 64 mOhms;Total Gate Charge (nQ
RM2302	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.0 A;Rds-on (typ) (mOhms) : 37 mOhms;Total Gate Charge (nQ
RM2302C	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 2.1 A;Rds-on (typ) (mOhms) : 35 mOhms;Total Gate Charge (nQ
RM2303	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 2.0 A;Rds-on (typ) (mOhms) : 72 mOhms;Total Gate Charge (nQ
RM2304	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.6 A;Rds-on (typ) (mOhms) : 58 mOhms;Total Gate Charge (nQ
RM2304E	RECTRON	获取价格	Vdss (V) : 30 V;Id @ 25C (A) : 3.8 A;Rds-on (typ) (mOhms) : 48 mOhms;Total Gate Charge (nQ
RM2305	RECTRON	获取价格	Vdss (V) : 20 V;Id @ 25C (A) : 4.1 A;Rds-on (typ) (mOhms) : 39 mOhms;Total Gate Charge (nQ