是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | SOT | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.95 |
风险等级: | 5.26 | Is Samacsys: | N |
配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 最小漏源击穿电压: | 20 V |
最大漏极电流 (Abs) (ID): | 6.5 A | 最大漏极电流 (ID): | 6.5 A |
最大漏源导通电阻: | 0.03 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 2 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 最大脉冲漏极电流 (IDM): | 20 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9926DYD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met | |
SI9926DYL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met | |
SI9926DYS62Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met | |
SI9926DY-T1 | VISHAY |
获取价格 |
Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal | |
SI9926DY-T1-E3 | VISHAY |
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Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal | |
SI9928DY | TEMIC |
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Small Signal Field-Effect Transistor, 5A I(D), 20V, 2-Element, N-Channel and P-Channel, Si | |
SI9928DY | VISHAY |
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Complimentary 20-V (D-S) MOSFET | |
SI9933ADY | VISHAY |
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Dual P-Channel 20-V (D-S) MOSFET | |
SI9933ADY | FAIRCHILD |
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Dual P-Channel PowerTrench MOSFET | |
SI9933ADY_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 3.4A I(D), 20V, 0.075ohm, 2-Element, P-Channel, Silicon, Me |