Datasheet > SI9926DY

SI9926DY

更新时间： 2024-09-14 12:46:59

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关脉冲光电二极管栅
页数	文件大小	规格书
2页	347K
描述
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V

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SI9926DY 数据手册

SMD Type

ype

ICIC

MMOOSSFFEET

Product specification

SI9926DY

■ Features

● RDS(on) ≤ 0.032 Ω @ VGS = 4.5 V

SOP-8

● RDS(on) ≤ 0.045 Ω @ VGS = 2.5 V.

Top View

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Drain-Source Voltage

Symbol

VDS

VGS

Rating

Unit

±10

6.5

Gate-Source Voltage

Continuous Drain Current

Pulsed Drain Current

IDM

Maximum Power Dissipation TA = 25℃

TA = 70℃

1.3

Thermal Resistance,Junction-to-Ambient

Jumction temperature and Storage temperature

RθJA

62.5

-55 to +150

℃/W

℃

Tj.Tstg

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