是否Rohs认证: | 符合 | 生命周期: | Obsolete |
包装说明: | SMALL OUTLINE, R-PDSO-G8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.79 |
Is Samacsys: | N | 配置: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
最小漏源击穿电压: | 20 V | 最大漏极电流 (Abs) (ID): | 6.2 A |
最大漏极电流 (ID): | 6.2 A | 最大漏源导通电阻: | 0.02 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 2 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 2 W | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
SI9926BDY-T1-GE3 | VISHAY |
完全替代 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926CDY-T1-GE3 | VISHAY |
类似代替 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI9926BDY-E3 | VISHAY |
功能相似 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9926BDY-T1-GE3 | VISHAY |
获取价格 |
Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926CDY | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI9926CDY-T1-E3 | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI9926CDY-T1-GE3 | VISHAY |
获取价格 |
Dual N-Channel 20-V (D-S) MOSFET | |
SI9926DY | FAIRCHILD |
获取价格 |
Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
SI9926DY | TYSEMI |
获取价格 |
Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V | |
SI9926DY | VISHAY |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, | |
SI9926DY | KEXIN |
获取价格 |
Dual N-Channel MOSFET | |
SI9926DYD84Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met | |
SI9926DYL86Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Met |