型号 | 品牌 | 获取价格 | 描述 | 数据表 |
SI9926BDY-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926BDY-T1 | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
SI9926BDY-T1-E3 | VISHAY |
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Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926BDY-T1-GE3 | VISHAY |
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Small Signal Field-Effect Transistor, 6.2A I(D), 20V, 2-Element, N-Channel, Silicon, Metal | |
SI9926CDY | VISHAY |
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Dual N-Channel 20-V (D-S) MOSFET | |
SI9926CDY-T1-E3 | VISHAY |
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Dual N-Channel 20-V (D-S) MOSFET | |
SI9926CDY-T1-GE3 | VISHAY |
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Dual N-Channel 20-V (D-S) MOSFET | |
SI9926DY | FAIRCHILD |
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Dual N-Channel 2.5V Specified PowerTrench MOSFET | |
SI9926DY | TYSEMI |
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Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS -10 V | |
SI9926DY | VISHAY |
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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET, |