Datasheet > PSMN040-100MSEX

PSMN040-100MSEX

更新时间： 2024-09-08 19:44:27

品牌	Logo	应用领域
恩智浦 - NXP		开关脉冲晶体管
页数	文件大小	规格书
13页	344K
描述
PSMN040-100MSE - N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications

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PSMN040-100MSEX 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
针数：	8	Reach Compliance Code：	compliant
风险等级：	5.73	Base Number Matches：	1

PSMN040-100MSEX 数据手册

PSMN040-100MSE

N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33

designed specifically for high power PoE applications

26 March 2013

Product data sheet

1. General description

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE)

systems capable of delivering up to 90W to each powered device (PD). Such solutions

place increased demands on the power sourcing equipment (PSE) in terms of “soft-start”,

thermal management and power density requirements.

2. Features and benefits

Enhanced forward biased safe operating area for superior linear mode operation

Low Rdson for low conduction losses

Ultra reliable LFPAK33 package for superior thermal and ruggedness performance

Very low I_DSS

•

3. Applications

High power PoE applications (60W and higher)

IEEE802.3at and proprietary solutions

•

4. Quick reference data

Table 1.

Symbol

Quick reference data

Parameter

Conditions

Min

Typ

Max

100

Unit

V_DS

I_D

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_j= 25 °C; V_GS= 10 V; Fig. 1

P_tot

total power dissipation T_mb= 25 °C; Fig. 2

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 10 A; T_j= 25 °C;

Fig. 13

29.4

36.6

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 10 A; V_DS= 50 V;

T_j= 25 °C; Fig. 14; Fig. 15

10.7

Q_G(tot)

Avalanche Ruggedness

E_DS(AL)Snon-repetitive drain-

V_GS= 10 V; T_j(init)= 25 °C; I_D= 30 A;

V_sup≤ 100 V; R_GS= 50 Ω; unclamped;

Fig. 3

source avalanche

energy

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