是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.16 |
雪崩能效等级(Eas): | 300 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 200 V |
最大漏极电流 (ID): | 39 A | 最大漏源导通电阻: | 0.057 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 245 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 156 A |
认证状态: | Not Qualified | 表面贴装: | YES |
端子面层: | Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN057-200B,118 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin | |
PSMN057-200B/T3 | NXP |
获取价格 |
TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen | |
PSMN057-200P | NXP |
获取价格 |
N-channel TrenchMOS transistor | |
PSMN057-200P | NEXPERIA |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FETProduction | |
PSMN057-200P,127 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin | |
PSMN057-200P_11 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET | |
PSMN059-150Y | NXP |
获取价格 |
N-channel TrenchMOS standard level FET | |
PSMN059-150Y | NEXPERIA |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FETProduction | |
PSMN059-150Y,115 | NXP |
获取价格 |
N-channel TrenchMOS SiliconMAX standard level FET SOIC 4-Pin | |
PSMN063-150 | NXP |
获取价格 |
N-channel enhancement mode field-effect transistor |