是否Rohs认证: | 符合 | 生命周期: | Transferred |
零件包装代码: | SOIC | 包装说明: | SMALL OUTLINE, R-PDSO-G8 |
针数: | 8 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
风险等级: | 5.16 | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 150 V | 最大漏极电流 (ID): | 3.5 A |
最大漏源导通电阻: | 0.085 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | MS-012AA | JESD-30 代码: | R-PDSO-G8 |
JESD-609代码: | e4 | 湿度敏感等级: | 2 |
元件数量: | 1 | 端子数量: | 8 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 3.5 W |
最大脉冲漏极电流 (IDM): | 40 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Nickel/Palladium/Gold (Ni/Pd/Au) | 端子形式: | GULL WING |
端子位置: | DUAL | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN085-150K | NXP |
完全替代 |
N-channel enhancement mode field-effect transistor | |
FDS2570 | FAIRCHILD |
功能相似 |
150V N-Channel PowerTrench MOSFET | |
HUF75831SK8T | FAIRCHILD |
功能相似 |
3A, 150V, 0.095 Ohm, N-Channel, UltraFET Power MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN0R7-25YLD | NXP |
获取价格 |
POWER, FET | |
PSMN0R7-25YLD | NEXPERIA |
获取价格 |
N-channel 25 V, 0.72 mΩ, 300 A logic level MO | |
PSMN0R9-25YLC | NXP |
获取价格 |
N-channel 25 V 0.99 mΩ logic level MOSFET in | |
PSMN0R9-25YLC | NEXPERIA |
获取价格 |
N-channel 25 V 0.99 mΩ logic level MOSFET in | |
PSMN0R9-25YLC,115 | NXP |
获取价格 |
PSMN0R9-25YLC - N-channel 25 V 0.99 mΩ logic | |
PSMN0R9-25YLD | NEXPERIA |
获取价格 |
N-channel 25 V, 0.85 mΩ, 300 A logic level MO | |
PSMN0R9-30ULD | NEXPERIA |
获取价格 |
N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced pa | |
PSMN0R9-30YLD | NXP |
获取价格 |
TRANSISTOR POWER, FET, FET General Purpose Power | |
PSMN0R9-30YLD | NEXPERIA |
获取价格 |
N-channel 30 V, 0.87 mΩ, 300 A logic level MO | |
PSMN102-200Y | NXP |
获取价格 |
N-channel TrenchMOS standard level FET |