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PSMN072-100MSE PDF预览

PSMN072-100MSE

更新时间: 2024-09-15 11:11:39
品牌 Logo 应用领域
安世 - NEXPERIA /
页数 文件大小 规格书
10页 233K
描述
N-channel 100 V 76 mOhm standard level ASFET with enhanced SOA in LFPAK33. Designed specifically for Power-over-ethernet (PoE) applicationsDevelopment

PSMN072-100MSE 数据手册

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PSMN072-100MSE  
N-channel 100 V 76 mOhm standard level ASFET with  
enhanced SOA in LFPAK33. Designed specifically for Power-  
over-ethernet (PoE) applications  
17 October 2022  
Objective data sheet  
1. General description  
New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems  
capable of delivering up to 90 W to each powered device (PD). Such solutions place increased  
demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and  
power density requirements.  
2. Features and benefits  
Enhanced safe operating area (SOA) for superior linear mode operation  
Low RDSon for low I2R losses  
Ultra reliable LFPAK33 package for superior thermal and ruggedness performance  
Very low IDSS leakage  
3. Applications  
Power-over-ethernet (PoE) applications (<50 W)  
IEEE802.3at and proprietary solutions  
CCTV  
WiFi hotspots  
5G picocells  
Fault tolerant load switch - Inrush management and eFuse applications  
4. Quick reference data  
Table 1. Quick reference data  
Symbol  
VDS  
ID  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
16  
Unit  
V
drain-source voltage  
drain current  
25 °C ≤ Tj ≤ 175 °C  
VGS = 10 V; Tmb = 25 °C  
-
-
-
-
-
-
A
Ptot  
total power dissipation Tmb = 25 °C; Fig. 1  
junction temperature  
-
45  
W
Tj  
-55  
175  
°C  
Static characteristics  
RDSon drain-source on-state  
resistance  
VGS = 10 V; ID = 5 A; Tj = 25 °C  
VGS = 10 V; ID = 5 A; Tj = 100 °C  
-
-
58  
91  
76  
mΩ  
mΩ  
116  
Dynamic characteristics  
QGD  
gate-drain charge  
total gate charge  
ID = 25 A; VDS = 50 V; VGS = 10 V;  
Tj = 25 °C  
[tbd]  
[tbd]  
0.9  
4.9  
[tbd]  
[tbd]  
nC  
nC  
QG(tot)  
Avalanche ruggedness  
EDS(AL)S non-repetitive drain-  
ID = 9 A; Vsup ≤ 100 V; RGS = 50 Ω;  
VGS = 10 V; Tj(init) = 25 °C; unclamped;  
tp = 13.4 µs  
[1]  
-
-
7.8  
mJ  
source avalanche  
energy  
 
 
 
 

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