Datasheet > PSMN069-100YS,115

PSMN069-100YS,115

更新时间： 2024-11-21 20:10:11

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
15页	214K
描述
PSMN069-100YS - N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET SOIC 4-Pin

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技术参数
数据手册

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PSMN069-100YS,115 技术参数

是否Rohs认证：	符合	生命周期：	Transferred
零件包装代码：	SOIC	包装说明：	PLASTIC, LFPAK-4
针数：	4	Reach Compliance Code：	not_compliant
风险等级：	5.74	Base Number Matches：	1

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PSMN069-100YS

N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET

Rev. 02 — 25 October 2010

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

Advanced TrenchMOS provides low

Improved mechanical and thermal

RDSon and low gate charge

characteristics

High efficiency gains in switching

LFPAK provides maximum power

power converters

density in a Power SO8 package

1.3 Applications

DC-to-DC converters

Lithium-ion battery protection

Load switching

Motor control

Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min Typ Max Unit

drain-source voltage T_j≥ 25 °C; T_j≤ 175 °C

100

I_D

drain current

T_mb= 25 °C; V_GS= 10 V;

see Figure 1

P_tot

total power

dissipation

T_mb= 25 °C; see Figure 2

T_j

junction temperature

-55

175 °C

Static characteristics

R_DSondrain-source on-state V_GS= 10 V; I_D= 5 A;

130 mΩ

resistance

T_j= 100 °C; see Figure 12

V_GS= 10 V; I_D= 5 A;

56.6 72.4 mΩ

T_j= 25 °C; see Figure 13

12 3 4 5 6 7...15

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