PSMN063-150

更新时间： 2024-09-13 22:06:39

品牌	Logo	应用领域
恩智浦 - NXP		晶体晶体管
页数	文件大小	规格书
12页	262K
描述
N-channel enhancement mode field-effect transistor

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数据手册

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PSMN063-150 数据手册

PSMN063-150D

N-channel enhancement mode ﬁeld-effect transistor

Rev. 03 — 31 October 2001

Product data

1. Product proﬁle

1.1 Description

N-channel enhancement mode ﬁeld-effect transistor in a plastic package using

TrenchMOS¹technology.

Product availability:

PSMN063-150D in SOT428 (D-PAK).

1.2 Features

■ TrenchMOS™ technology

■ Fast Switching

■ Very low on-state resistance

■ Low thermal resistance

1.3 Applications

■ DC to DC converters

■ Switched mode power supplies

1.4 Quick reference data

■ V_DS= 150 V

■ P_tot= 150 W

■ I_D= 29 A

■ R_DSon≤ 63 mΩ

2. Pinning information

Table 1:

Pinning - SOT428 (D-PAK), simpliﬁed outline and symbol

Description

gate (g)

Simpliﬁed outline

Symbol

[1]

drain (d)

source (s)

connected to drain (d)

MBB076

Top view

MBK091

[1] It is not possible to make a connection to pin 2 of the SOT428 package.

1. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V.

12 3 4 5 6 7...12

中文翻译

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与PSMN063-150相关器件

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