Datasheet > PSMN0R9-30ULD

PSMN0R9-30ULD

更新时间： 2024-09-16 11:11:31

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
13页	263K
描述
N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595Production

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PSMN0R9-30ULD 数据手册

PSMN0R9-30ULD

N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET

in SOT1023A enhanced package for UL2595, using

NextPowerS3 Schottky-Plus Technology

23 May 2018

Product data sheet

1. General description

SOT1023A with improved creepage and clearance to meet UL2595 requirements. 300 Amp logic

level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3

portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking

performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode

but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency

applications at high switching frequencies.

2. Features and benefits

•

Improved creepage and clearance – meets the requirements of UL2595

300 A capability

•

Avalanche rated, 100% tested at I_AS= 190 A

Ultra low Q_G, Q_GDand Q_OSSfor high system efficiency, especially at higher switching

frequencies

•

Superfast switching with soft-recovery; s-factor > 1

Low spiking and ringing for low EMI designs

Unique “SchottkyPlus” technology; Schottky-like performance with < 1 μA leakage at 25 °C

Optimised for 4.5 V gate drive

Low parasitic inductance and resistance

High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds,

qualified to 150 °C

•

Wave solderable; exposed leads for optimal visual solder inspection

3. Applications

•

Brushed and brushless motor control

Battery powered appliances where enhanced creepage and clearance is required to meet

UL2595

•

For non-UL2595 applications please use PSMN0R9-30YLD

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 150 °C

V_GS= 10 V; T_mb= 25 °C; Fig. 2

[1]

300

227

150

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

°C

12 3 4 5 6 7...13

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