是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Transferred | 零件包装代码: | SOIC |
包装说明: | PLASTIC, SO-8 | 针数: | 8 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.17 | Is Samacsys: | N |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 150 V |
最大漏极电流 (ID): | 3.5 A | 最大漏源导通电阻: | 0.085 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MS-012AA |
JESD-30 代码: | R-PDSO-G8 | JESD-609代码: | e4 |
湿度敏感等级: | 2 | 元件数量: | 1 |
端子数量: | 8 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 3.5 W | 最大脉冲漏极电流 (IDM): | 40 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | NICKEL PALLADIUM GOLD |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
PSMN085-150K,518 | NXP |
完全替代 |
N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin | |
FDS2570 | FAIRCHILD |
功能相似 |
150V N-Channel PowerTrench MOSFET |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN085-150K,518 | NXP |
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N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin | |
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POWER, FET | |
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PSMN0R9-25YLC,115 | NXP |
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PSMN0R9-25YLC - N-channel 25 V 0.99 mΩ logic | |
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N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced pa | |
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PSMN0R9-30YLD | NEXPERIA |
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N-channel 30 V, 0.87 mΩ, 300 A logic level MO |