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PSMN085-150K PDF预览

PSMN085-150K

更新时间: 2024-09-13 22:06:51
品牌 Logo 应用领域
恩智浦 - NXP 晶体晶体管功率场效应晶体管开关脉冲光电二极管
页数 文件大小 规格书
13页 249K
描述
N-channel enhancement mode field-effect transistor

PSMN085-150K 技术参数

是否无铅:不含铅是否Rohs认证:符合
生命周期:Transferred零件包装代码:SOIC
包装说明:PLASTIC, SO-8针数:8
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.17Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):3.5 A最大漏源导通电阻:0.085 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MS-012AA
JESD-30 代码:R-PDSO-G8JESD-609代码:e4
湿度敏感等级:2元件数量:1
端子数量:8工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3.5 W最大脉冲漏极电流 (IDM):40 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:NICKEL PALLADIUM GOLD
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN085-150K 数据手册

 浏览型号PSMN085-150K的Datasheet PDF文件第2页浏览型号PSMN085-150K的Datasheet PDF文件第3页浏览型号PSMN085-150K的Datasheet PDF文件第4页浏览型号PSMN085-150K的Datasheet PDF文件第5页浏览型号PSMN085-150K的Datasheet PDF文件第6页浏览型号PSMN085-150K的Datasheet PDF文件第7页 
PSMN085-150K  
N-channel enhancement mode field-effect transistor  
Rev. 01 — 16 January 2001  
Product specification  
1. Description  
SiliconMAX™1 products use the latest Philips TrenchMOS™2 technology to achieve  
the lowest possible on-state resistance in a SOT96-1 (SO8) package.  
Product availability:  
PSMN085-150K in SOT96-1 (SO8).  
2. Features  
Very low on-state resistance  
Fast switching  
TrenchMOS™ technology.  
3. Applications  
DC to DC convertor  
Computer motherboards  
Switch mode power supplies.  
c
c
4. Pinning information  
Table 1: Pinning - SOT96-1, simplified outline and symbol  
Pin  
Description  
source (s)  
gate (g)  
Simplified outline  
Symbol  
1,2,3  
4
d
s
8
5
5,6,7,8  
drain (d)  
g
1
4
MBB076  
Top view  
MBK187  
SOT96-1 (SO8)  
1. SiliconMAX is a trademark of Royal Philips Electronics.  
2. TrenchMOS is a trademark of Royal Philips Electronics.  

PSMN085-150K 替代型号

型号 品牌 替代类型 描述 数据表
PSMN085-150K,518 NXP

完全替代

N-channel TrenchMOS SiliconMAX standard level FET SOIC 8-Pin
FDS2570 FAIRCHILD

功能相似

150V N-Channel PowerTrench MOSFET

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