5秒后页面跳转
PSMN063-150D/T3 PDF预览

PSMN063-150D/T3

更新时间: 2024-09-14 19:25:11
品牌 Logo 应用领域
恩智浦 - NXP 开关脉冲晶体管
页数 文件大小 规格书
12页 106K
描述
TRANSISTOR 29 A, 150 V, 0.063 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, PLASTIC, SC-63, TO-252, DPAK-3, FET General Purpose Power

PSMN063-150D/T3 技术参数

是否Rohs认证: 符合生命周期:Transferred
零件包装代码:TO-252AA包装说明:PLASTIC, SC-63, TO-252, DPAK-3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.17
雪崩能效等级(Eas):502 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:150 V
最大漏极电流 (ID):29 A最大漏源导通电阻:0.063 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):116 A
认证状态:Not Qualified表面贴装:YES
端子面层:TIN端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

PSMN063-150D/T3 数据手册

 浏览型号PSMN063-150D/T3的Datasheet PDF文件第2页浏览型号PSMN063-150D/T3的Datasheet PDF文件第3页浏览型号PSMN063-150D/T3的Datasheet PDF文件第4页浏览型号PSMN063-150D/T3的Datasheet PDF文件第5页浏览型号PSMN063-150D/T3的Datasheet PDF文件第6页浏览型号PSMN063-150D/T3的Datasheet PDF文件第7页 
PSMN063-150D  
N-channel enhancement mode field-effect transistor  
Rev. 03 — 31 October 2001  
Product data  
1. Product profile  
1.1 Description  
N-channel enhancement mode field-effect transistor in a plastic package using  
TrenchMOS1 technology.  
Product availability:  
PSMN063-150D in SOT428 (D-PAK).  
1.2 Features  
TrenchMOS™ technology  
Fast Switching  
Very low on-state resistance  
Low thermal resistance  
1.3 Applications  
DC to DC converters  
Switched mode power supplies  
1.4 Quick reference data  
VDS = 150 V  
Ptot = 150 W  
ID = 29 A  
RDSon 63 mΩ  
2. Pinning information  
Table 1:  
Pinning - SOT428 (D-PAK), simplified outline and symbol  
Pin  
1
Description  
gate (g)  
Simplified outline  
Symbol  
mb  
d
[1]  
2
drain (d)  
3
source (s)  
g
mb  
connected to drain (d)  
s
MBB076  
2
1
3
Top view  
MBK091  
[1] It is not possible to make a connection to pin 2 of the SOT428 package.  
1. TrenchMOS™ is a trademark of Koninklijke Philips Electronics N.V.  
 
 
 
 
 

与PSMN063-150D/T3相关器件

型号 品牌 获取价格 描述 数据表
PSMN069-100YS NXP

获取价格

N-channel LFPAK 100 V 72.4 mΩ standard level
PSMN069-100YS NEXPERIA

获取价格

N-channel LFPAK 100 V 72.4 mΩ standard level
PSMN069-100YS,115 NXP

获取价格

PSMN069-100YS - N-channel LFPAK 100 V 72.4 mΩ
PSMN070-200B NXP

获取价格

N-channel TrenchMOS transistor
PSMN070-200B,118 NXP

获取价格

N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
PSMN070-200B/T3 NXP

获取价格

暂无描述
PSMN070-200P NXP

获取价格

N-channel TrenchMOS transistor
PSMN070-200P,127 NXP

获取价格

N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
PSMN071-100NSE NEXPERIA

获取价格

N-channel 100 V, 81 mOhm standard level ‘ASFE
PSMN072-100MSE NEXPERIA

获取价格

N-channel 100 V 76 mOhm standard level ASFET with enhanced SOA in LFPAK33. Designed specif