Datasheet > PSMN041-100MSE

PSMN041-100MSE

更新时间： 2024-09-09 11:15:11

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
9页	233K
描述
N-channel 100 V 42 mOhm standard level ASFET with enhanced SOA in LFPAK33 package. Designed specifically for high power PoE applicationsDevelopment

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PSMN041-100MSE 数据手册

PSMN041-100MSE

N-channel 100 V 42 mOhm standard level ASFET with

enhanced SOA in LFPAK33 package. Designed specifically

for high power PoE applications

21 July 2023

Objective data sheet

1. General description

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems

capable of delivering up to 90 W to each powered device (PD). Such solutions place increased

demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management and

power density requirements.

2. Features and benefits

•

Enhanced safe operating area (SOA) for superior linear mode operation

•

Low R_DSonfor low I²R losses

Ultra reliable LFPAK33 package for superior thermal and ruggedness performance

Very low I_DSSleakage

3. Applications

•

High power PoE applications (>50 W)

IEEE802.3at and proprietary solutions

CCTV

WiFi hotspots

5G picocells

Fault tolerant load switch - Inrush management and eFuse applications

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

I_D

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

V_GS= 10 V; T_mb= 25 °C

P_tot

total power dissipation T_mb= 25 °C; Fig. 1

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 5 A; T_j= 25 °C

V_GS= 10 V; I_D= 5 A; T_j= 100 °C

mΩ

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 25 A; V_DS= 50 V; V_GS= 10 V;

T_j= 25 °C

[tbd]

Q_G(tot)

10.5

Avalanche ruggedness

E_DS(AL)Snon-repetitive drain-

I_D= 13 A; V_sup≤ 100 V; R_GS= 50 Ω;

V_GS= 10 V; T_j(init)= 25 °C; unclamped;

t_p= 22 s

[1]

18.5

source avalanche

energy

12 3 4 5 6 7...9

中文翻译

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