Datasheet > PSMN050-80BS,118

PSMN050-80BS,118

更新时间： 2024-09-08 19:49:15

品牌	Logo	应用领域
恩智浦 - NXP		/
页数	文件大小	规格书
14页	208K
描述
PSMN050-80BS - N-channel 80 V 46 mΩ standard level MOSFET in D2PAK D2PAK 3-Pin

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中文翻译

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技术参数
数据手册

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PSMN050-80BS,118 技术参数

Source Url Status Check Date：	2013-06-14 00:00:00	是否Rohs认证：	符合
生命周期：	Transferred	零件包装代码：	D2PAK
针数：	3	Reach Compliance Code：	compliant
风险等级：	5.73	配置：	Single
最大漏极电流 (Abs) (ID)：	22 A	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-609代码：	e3	湿度敏感等级：	1
工作模式：	ENHANCEMENT MODE	最高工作温度：	175 °C
极性/信道类型：	N-CHANNEL	最大功率耗散 (Abs)：	56 W
子类别：	FET General Purpose Power	表面贴装：	YES
端子面层：	Tin (Sn)	Base Number Matches：	1

PSMN050-80BS,118 数据手册

PSMN050-80BS

D2P

N-channel 80 V 46 mΩ standard level MOSFET in D2PAK

Rev. 1 — 2 March 2012

Product data sheet

1. Product profile

1.1 General description

Standard level N-channel MOSFET in D2PAK package qualified to 175 °C. This product is

designed and qualified for use in a wide range of industrial, communications and domestic

equipment.

1.2 Features and benefits

 High efficiency due to low switching

 Suitable for standard level gate drive

and conduction losses

sources

1.3 Applications

 DC-to-DC converters

 Load switching

 Motor control

 Server power supplies

1.4 Quick reference data

Table 1.

Symbol

V_DS

Quick reference data

Parameter

Conditions

Min

Typ

Max

Unit

drain-source voltage

drain current

T_j≥ 25 °C; T_j≤ 175 °C

T_mb= 25 °C; V_GS= 10 V; see Figure 1

I_D

P_tot

total power dissipation T_mb= 25 °C; see Figure 2

junction temperature

T_j

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

Dynamic characteristics

V_GS= 10 V; I_D= 10 A; T_j= 25 °C

mΩ

Q_GD

gate-drain charge

total gate charge

V_GS= 10 V; I_D= 25 A; V_DS= 40 V;

see Figure 14; see Figure 15

2.3

Q_G(tot)

Avalanche ruggedness

E_DS(AL)Snon-repetitive

V_GS= 10 V; T_j(init)= 25 °C; I_D= 22 A;

drain-source

V_sup≤ 80 V; R_GS= 50 Ω; unclamped

avalanche energy

12 3 4 5 6 7...14

中文翻译

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