Datasheet > PSMN047-100NSE

PSMN047-100NSE

更新时间： 2024-09-09 11:12:59

品牌	Logo	应用领域
安世 - NEXPERIA		/
页数	文件大小	规格书
7页	208K
描述
N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Designed specifically for high power PoE applicationsDevelopment

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

PSMN047-100NSE 数据手册

PSMN047-100NSE

N-channel 100 V, 53 mOhm standard level ASFET with

enhanced SOA in DFN2020 package. Designed specifically

for high power PoE applications

21 July 2023

Preliminary data sheet

1. General description

New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems

capable of delivering up to 90 W to each powered device (PD). Such solutions place increased

demands on the power sourcing equipment (PSE) in terms of “soft-start”, thermal management

and power density requirements. PSMN047-100NSE is designed specifically for high power PoE

applications.

2. Features and benefits

•

Enhanced safe operating area (SOA) for superior linear mode operation

•

Low R_DSonfor low I²R conduction losses

2 mm x 2 mm space-saving DFN2020 package, 60% smaller than LFPAK33

Very low I_DSSleakage

3. Applications

•

High power PoE applications (60 W and higher)

IEEE802.3at and proprietary PoE solutions

Fault tolerant load switch - Inrush management and eFuse applications

Battery management applications

4. Quick reference data

Table 1. Quick reference data

Symbol

V_DS

Parameter

Conditions

Min

Typ

Max

100

Unit

drain-source voltage

drain current

25 °C ≤ T_j≤ 175 °C

I_D

V_GS= 10 V; T_mb= 25 °C; #unique_5/

unique_5_Connect_42_idaaa-036986

18.4

P_tot

total power dissipation T_mb= 25 °C; #unique_5/

unique_5_Connect_42_id03aa16

T_j

junction temperature

-55

175

°C

Static characteristics

R_DSondrain-source on-state

resistance

V_GS= 10 V; I_D= 5 A;

T_j= 25 °C; #unique_6/

unique_6_Connect_42_idaaa-036993

53.4

mΩ

V_GS= 10 V; I_D= 5 A;

T_j= 100 °C; #unique_6/

unique_6_Connect_42_idaaa-029656

Dynamic characteristics

Q_GD

gate-drain charge

total gate charge

I_D= 5 A; V_DS= 50 V; V_GS= 10 V;

T_j= 25 °C; #unique_6/

unique_6_Connect_42_idaaa-036994;

#unique_6/

0.4

4.4

1.5

8.9

3.5

Q_G(tot)

13.3

unique_6_Connect_42_id003aaa508

12 3 4 5 6 7

中文翻译

下载PDF

与PSMN047-100NSE相关器件

型号	品牌	获取价格	描述	数据表
PSMN050-80BS,118	NXP	获取价格	PSMN050-80BS - N-channel 80 V 46 mΩ standard
PSMN050-80PS	NXP	获取价格	N-channel 80 V 50 mΩ standard level MOSFET
PSMN057-200B	NXP	获取价格	N-channel TrenchMOS transistor
PSMN057-200B	NEXPERIA	获取价格	N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN057-200B,118	NXP	获取价格	N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin
PSMN057-200B/T3	NXP	获取价格	TRANSISTOR 39 A, 200 V, 0.057 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET Gen
PSMN057-200P	NXP	获取价格	N-channel TrenchMOS transistor
PSMN057-200P	NEXPERIA	获取价格	N-channel TrenchMOS SiliconMAX standard level FETProduction
PSMN057-200P,127	NXP	获取价格	N-channel TrenchMOS SiliconMAX standard level FET TO-220 3-Pin
PSMN057-200P_11	NXP	获取价格	N-channel TrenchMOS SiliconMAX standard level FET