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PSMN045-80YS PDF预览

PSMN045-80YS

更新时间: 2024-09-09 11:13:11
品牌 Logo 应用领域
安世 - NEXPERIA 开关脉冲晶体管
页数 文件大小 规格书
15页 833K
描述
N-channel LFPAK 80 V 45 mΩ standard level MOSFETProduction

PSMN045-80YS 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:SMALL OUTLINE, R-PSSO-G4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:1.75
雪崩能效等级(Eas):18 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (ID):24 A最大漏源导通电阻:0.045 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:MO-235
JESD-30 代码:R-PSSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大脉冲漏极电流 (IDM):86 A
表面贴装:YES端子面层:Tin (Sn)
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

PSMN045-80YS 数据手册

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PSMN045-80YS  
N-channel LFPAK 80 V 45 mstandard level MOSFET  
Rev. 02 — 25 October 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Standard level N-channel MOSFET in LFPAK package qualified to 175 °C. This product is  
designed and qualified for use in a wide range of industrial, communications and domestic  
equipment.  
1.2 Features and benefits  
„ Advanced TrenchMOS provides low  
„ Improved mechanical and thermal  
RDSon and low gate charge  
characteristics  
„ High efficiency gains in switching  
„ LFPAK provides maximum power  
power converters  
density in a Power SO8 package  
1.3 Applications  
„ DC-to-DC converters  
„ Lithium-ion battery protection  
„ Load switching  
„ Motor control  
„ Server power supplies  
1.4 Quick reference data  
Table 1.  
Symbol  
VDS  
Quick reference data  
Parameter  
Conditions  
Min Typ Max Unit  
drain-source voltage Tj 25 °C; Tj 175 °C  
-
-
-
-
-
-
80  
24  
56  
V
ID  
drain current  
Tmb = 25 °C; VGS = 10 V  
Tmb = 25 °C; see Figure 2  
A
Ptot  
total power  
dissipation  
W
Tj  
junction temperature  
-55  
-
175 °C  
Static characteristics  
RDSon drain-source  
VGS = 10 V; ID = 5 A;  
-
-
-
72  
45  
mΩ  
mΩ  
on-state resistance Tj = 100 °C; see Figure 13  
VGS = 10 V; ID = 5 A; Tj = 25 °C  
37  

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