是否Rohs认证: | 符合 | 生命周期: | Transferred |
包装说明: | PLASTIC, POWER, SOP-8, LFPAK56-4 | Reach Compliance Code: | unknown |
ECCN代码: | EAR99 | 风险等级: | 5.74 |
雪崩能效等级(Eas): | 23.9 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (ID): | 25 A | 最大漏源导通电阻: | 0.041 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | MO-235 |
JESD-30 代码: | R-PSSO-G4 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 4 | 工作模式: | ENHANCEMENT MODE |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大脉冲漏极电流 (IDM): | 100 A |
参考标准: | IEC-60134 | 表面贴装: | YES |
端子面层: | TIN | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | 30 |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
PSMN041-80YLX | NXP |
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N-channel 80 V 41 mΩ logic level MOSFET in LF |
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PSMN045-100HL | NEXPERIA |
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N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technologyProduct |
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PSMN045-80YS | NXP |
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N-channel LFPAK 80 V 45 mΩ standard level MOS |
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PSMN045-80YS | NEXPERIA |
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N-channel LFPAK 80 V 45 mΩ standard level MOS |
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PSMN047-100NSE | NEXPERIA |
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N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020 package. Design |
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PSMN050-80BS,118 | NXP |
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PSMN050-80BS - N-channel 80 V 46 mΩ standard |
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PSMN050-80PS | NXP |
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N-channel 80 V 50 mΩ standard level MOSFET |
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PSMN057-200B | NXP |
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N-channel TrenchMOS transistor |
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PSMN057-200B | NEXPERIA |
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N-channel TrenchMOS SiliconMAX standard level FETProduction |
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PSMN057-200B,118 | NXP |
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N-channel TrenchMOS SiliconMAX standard level FET D2PAK 3-Pin |
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